V20100C-M3/4W

V20100C, VI20100C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS ® TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses K • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 3 1 1 V20100C 2 3 TYPICAL APPLICATIONS VI20100C PIN 1 PIN 2 PIN 1 PIN 2 PIN 3 CASE PIN 3 K For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade 2 x 10 A VRRM 100 V IFSM 150 A VF at IF = 10 A 0.58 V TJ max. 150 °C Package TO-220AB, TO-262AA Diode variation Common cathode Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Max. repetitive peak reverse voltage Max. average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Voltage rate of change (rated VR) Operating junction and storage temperature range VRRM per device per diode IF(AV) IFSM V20100C VI20100C 100 20 10 UNIT V A 150 A dV/dt 10 000 V/μs TJ, TSTG -40 to +150 °C Revision: 09-Nov-17 Document Number: 89161 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20100C, VI20100C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A Instantaneous forward voltage per diode IF = 10 A IF = 5 A IF = 10 A VR = 70 V Reverse current per diode VR = 100 V SYMBOL TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C IR (2) TA = 125 °C TYP. MAX. 0.55 - UNIT 0.65 0.79 0.50 - 0.58 0.68 17 - μA 5.3 - mA - 800 μA 12 25 mA VI20100C UNIT V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance per diode RJC V20100C 2.8 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY TO-220AB V20100C-M3/4W 1.881 4W 50/tube DELIVERY MODE Tube TO-262AA VI20100C-M3/4W 1.45 4W 50/tube Tube Revision: 09-Nov-17 Document Number: 89161 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20100C, VI20100C www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 24 Instantaneous Reverse Current (mA) 100 Average Forward Current (A) Resistive or Inductive Load 20 16 12 8 4 25 50 75 100 125 150 175 TA = 25 °C 0.01 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode 10 000 D = 0.5 18 D = 0.8 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.3 Junction Capacitance (pF) Average Power Loss (W) 0.1 Case Temperature (°C) 20 16 D = 0.2 14 D = 1.0 D = 0.1 12 10 8 T 6 4 2 D = tp/T tp 16 20 1000 100 10 0 0 4 8 12 0.1 24 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) TA = 125 °C 1 0.001 10 0 0 TA = 150 °C 10 TA = 150 °C TA = 125 °C 10 TA = 25 °C 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Junction to Case 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 09-Nov-17 Document Number: 89161 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20100C, VI20100C www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) TO-262AA 0.411 (10.45) 0.380 (9.65) 0.950 (24.13) 0.920 (23.37) 1 PIN 2 3 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.401 (10.19) 0.381 (9.68) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.35) Revision: 09-Nov-17 Document Number: 89161 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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