V20100SG, VI20100SG
www.vishay.com
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
FEATURES
TMBS ®
TO-220AB
• Trench MOS Schottky technology
TO-262AA
• Low forward voltage drop, low power losses
K
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
3
1
1
V20100SG
PIN 1
PIN 2
PIN 3
CASE
2
3
TYPICAL APPLICATIONS
VI20100SG
PIN 1
PIN 2
PIN 3
K
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
100 V
IFSM
150 A
VF at IF = 20 A
0.75 V
TJ max.
150 °C
Package
TO-220AB, TO-262AA
Diode variations
Single
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20100SG
VI20100SG
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
V
Maximum average forward rectified current (fig. 1)
IF(AV)
20
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
150
A
dV/dt
10 000
V/μs
TJ, TSTG
-40 to +150
°C
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Revision: 09-Nov-17
Document Number: 89153
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V20100SG, VI20100SG
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 10 A
Instantaneous forward voltage
TA = 25 °C
IF = 20 A
VF (1)
IF = 5 A
TA = 125 °C
IF = 10 A
IF = 20 A
TA = 25 °C
VR = 70 V
TA = 125 °C
Reverse current
TA = 25 °C
VR = 100 V
IR (2)
TA = 125 °C
TYP.
MAX.
0.55
-
UNIT
0.66
-
0.91
1.07
0.50
-
0.59
-
0.75
0.82
15
-
μA
6
-
mA
60
350
μA
13
25
mA
VI20100SG
UNIT
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
RJC
V20100SG
2.2
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
V20100SG-M3/4W
1.88
4W
50/tube
Tube
TO-262AA
VI20100SG-M3/4W
1.45
4W
50/tube
Tube
Revision: 09-Nov-17
Document Number: 89153
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V20100SG, VI20100SG
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Instantaneous Reverse Current (mA)
24
Average Forward Current (A)
Resistive or Inductive Load
20
16
12
8
4
TA = 150 °C
10
TA = 125 °C
1
0.1
0.01
TA = 25 °C
0.001
0
0
25
50
75
100
125
150
10
175
20
30
40
50
60
70
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
100
10 000
D = 0.5
D = 0.8
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.2
20
D = 1.0
D = 0.1
15
10
T
5
D = tp/T
tp
16
20
Junction Capacitance (pF)
D = 0.3
Average Power Loss (W)
90
Percent of Rated Peak Reverse Voltage (%)
25
0
1000
100
10
0
4
8
12
24
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
80
Case Temperature (°C)
TA = 150 °C
TA = 125 °C
10
TA = 25 °C
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Junction to Case
1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 09-Nov-17
Document Number: 89153
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V20100SG, VI20100SG
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.161 (4.08)
0.139 (3.53)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.950 (24.13)
0.920 (23.37)
1
PIN
2 3
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.401 (10.19)
0.381 (9.68)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
Revision: 09-Nov-17
Document Number: 89153
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000