V20120S-M3/4W

V20120S, VI20120S www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS ® TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses K • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 2 3 1 1 2 3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS V20120S VI20120S PIN 1 PIN 2 PIN 1 PIN 2 PIN 3 CASE PIN 3 K For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 120 V IFSM 200 A VF at IF = 20 A 0.73 V TJ max. 150 °C Package TO-220AB, TO-262AA Diode variation Single Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V20120S VI20120S UNIT Maximum repetitive peak reverse voltage VRRM 120 V Maximum average forward rectified current (fig. 1) IF(AV) 20 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A dV/dt 10 000 V/μs TJ, TSTG -40 to +150 °C Voltage rate of change (rated VR) Operating junction and storage temperature range Revision: 09-Nov-17 Document Number: 89243 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20120S, VI20120S www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 10 A Instantaneous forward voltage TA = 25 °C IF = 20 A VF (1) IF = 5 A IF = 10 A TA = 125 °C IF = 20 A VR = 90 V Reverse current VR = 120 V TYP. MAX. 0.57 - 0.71 - 0.99 1.12 0.50 - 0.61 - UNIT V 0.73 0.81 TA = 25 °C 10 - μA TA = 125 °C 6 - mA - 300 μA 14 30 mA TA = 25 °C IR (2) TA = 125 °C Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance V20120S RJC VI20120S 2.0 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V20120S-M3/4W PREFERRED P/N 1.88 4W 50/tube Tube TO-262AA VI20120S-M3/4W 1.45 4W 50/tube Tube Revision: 09-Nov-17 Document Number: 89243 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20120S, VI20120S www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Instantaneous Reverse Current (mA) 25 Average Forward Current (A) Resistive or Inductive Load 20 15 10 5 Mounted on Specific Heatsink 0 25 50 75 1 TA = 100 °C 0.1 TA = 25 °C 0.01 100 125 150 10 175 20 30 40 50 60 70 80 90 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics 20 100 10 Transient Thermal Impedance (°C/W) D = 0.8 D = 0.5 18 Average Power Loss (W) TA = 125 °C 0.001 0 D = 0.3 16 D = 0.2 14 12 D = 1.0 D = 0.1 10 8 T 6 4 2 D = tp/T tp 0 5 10 15 20 Junction to Case 1 0.1 0.01 0 25 0.1 1 10 100 Average Forward Current (A) t - Pulse Duration (s) Fig. 2 - Forward Power Dissipation Characteristics Fig. 5 - Typical Transient Thermal Impedance 10 000 100 TA = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) TA = 150 °C 10 TA = 125 °C 10 TA = 100 °C 1 TA = 25 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Junction Capacitance 100 Revision: 09-Nov-17 Document Number: 89243 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20120S, VI20120S www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) TO-262AA 0.411 (10.45) 0.380 (9.65) 0.950 (24.13) 0.920 (23.37) 1 PIN 2 3 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.401 (10.19) 0.381 (9.68) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.35) Revision: 09-Nov-17 Document Number: 89243 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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