V20120SG, VI20120SG
www.vishay.com
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
FEATURES
TMBS ®
TO-220AB
• Trench MOS Schottky technology
TO-262AA
• Low forward voltage drop, low power losses
K
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
2
3
1
1
2
3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
V20120SG
VI20120SG
PIN 1
PIN 2
PIN 1
PIN 2
PIN 3
CASE
PIN 3
K
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
120 V
IFSM
150 A
VF at IF = 20 A
0.78 V
TJ max.
150 °C
Package
TO-220AB, TO-262AA
Diode variation
Single
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20120SG
VI20120SG
UNIT
Maximum repetitive peak reverse voltage
VRRM
120
V
Maximum average forward rectified current (fig. 1)
IF(AV)
20
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
dV/dt
10 000
V/μs
TJ, TSTG
-40 to +150
°C
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Revision: 09-Nov-17
Document Number: 89244
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V20120SG, VI20120SG
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 10 A
Instantaneous forward voltage
TA = 25 °C
IF = 20 A
VF (1)
IF = 5 A
IF = 10 A
TA = 125 °C
Reverse current
VR = 120 V
MAX.
0.62
-
0.81
-
1.20
1.33
0.54
-
UNIT
V
0.65
-
0.78
0.88
TA = 25 °C
10
-
μA
TA = 125 °C
7
-
mA
-
250
μA
12
25
mA
IF = 20 A
VR = 90 V
TYP.
TA = 25 °C
IR (2)
TA = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
V20120SG
RJC
VI20120SG
2.2
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
V20120SG-M3/4W
1.88
4W
50/tube
Tube
TO-262AA
VI20120SG-M3/4W
1.45
4W
50/tube
Tube
Revision: 09-Nov-17
Document Number: 89244
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V20120SG, VI20120SG
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
25
Instantaneous Reverse Current (mA)
100
Average Forward Current (A)
Resistive or Inductive Load
20
15
10
5
Mounted on Specific Heatsink
0
25
50
75
100
125
150
1
TA = 100 °C
0.1
0.01
TA = 25 °C
10
175
20
30
40
50
60
70
80
90
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
35
100
30
D = 0.3
D = 0.2
25
D = 1.0
20
D = 0.1
15
T
10
5
D = tp/T
tp
16
20
Transient Thermal Impedance (°C/W)
10
D = 0.8
D = 0.5
Average Power Loss (W)
TA = 125 °C
0.001
0
0
4
8
12
Junction to Case
1
0.01
0
24
0.1
1
10
100
Average Forward Current (A)
t - Pulse Duration (s)
Fig. 2 - Forward Power Dissipation Characteristics
Fig. 5 - Typical Transient Thermal Impedance
10 000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
TA = 150 °C
10
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
1000
100
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1
10
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Junction Capacitance
100
Revision: 09-Nov-17
Document Number: 89244
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V20120SG, VI20120SG
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.161 (4.08)
0.139 (3.53)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.950 (24.13)
0.920 (23.37)
1
PIN
2 3
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.401 (10.19)
0.381 (9.68)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
Revision: 09-Nov-17
Document Number: 89244
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 01-Jan-2022
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Document Number: 91000