V20200C-E3/4W

V20200C-E3/4W

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO-220AB-3

  • 描述:

    特性:沟槽MOS肖特基技术。 低正向压降,低功耗。 高效运行。 低热阻。 符合J-STD-020的MSL 1级,LF最大峰值245℃(适用于TO-263AB封装)。 焊浴温度最高275℃,持续10s(...

  • 数据手册
  • 价格&库存
V20200C-E3/4W 数据手册
V20200C-E3, VF20200C-E3, VB20200C-E3, VI20200C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A FEATURES TMBS ® TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 3 1 V20200C 2 1 3 VF20200C PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 TO-263AB • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PIN 2 TYPICAL APPLICATIONS TO-262AA For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. K K MECHANICAL DATA 2 1 1 VB20200C K PIN 2 2 3 VI20200C PIN 1 HEATSINK • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 200 V IFSM 120 A Case: TO-220AB, TO-262AA ITO-220AB, TO-263AB and Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs max. VF at IF = 10 A 0.68 V TJ max. 150 °C Package TO-220AB, ITO-220AB, TO-263AB, TO-262AA Diode variations Common cathode MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V20200C VF20200C VB20200C VI20200C Max. repetitive peak reverse voltage Max. average forward rectified current (fig. 1) VRRM per device per diode IF(AV) 200 20 10 UNIT V A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 120 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH  per diode EAS 100 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz,  TJ = 38 °C ± 2 °C per diode IRRM 0.5 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs VAC 1500 V TJ, TSTG -40 to +150 °C Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range Revision: 05-Mar-18 Document Number: 89072 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20200C-E3, VF20200C-E3, VB20200C-E3, VI20200C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage IR = 1.0 mA IF = 5 A Instantaneous forward voltage per diode (1) IF = 10 A IF = 5 A IF = 10 A VR = 180 V Reverse current per diode (2) VR = 200 V SYMBOL TYP. MAX. UNIT VBR 200 (min.) - V 0.85 - 1.21 1.60 0.60 - 0.68 0.76 TA = 25 °C TA = 25 °C VF TA = 125 °C V TA = 25 °C 6 - μA TA = 125 °C 3.6 - mA - 150 μA 5.6 18 mA IR TA = 25 °C TA = 125 °C Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V20200C VF20200C VB20200C VI20200C UNIT RJC 2.8 5.0 2.8 2.8 °C/W Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V20200C-E3/4W PREFERRED P/N 1.88 4W 50/tube Tube ITO-220AB VF20200C-E3/4W 1.75 4W 50/tube Tube TO-263AB VB20200C-E3/4W 1.37 4W 50/tube Tube TO-263AB VB20200C-E3/8W 1.37 8W 800/reel Tape and reel TO-262AA VI20200C-E3/4W 1.45 4W 50/tube Tube  RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 9 25 D = 0.5 8 V20200C 20 Average Power Loss (W) Average Forward Current (A) Resistive or Inductive Load 15 VF20200C 10 5 7 D = 0.2 6 D = 1.0 D = 0.1 5 4 T 3 2 1 0 D = 0.8 D = 0.3 D = tp/T tp 8 10 0 0 25 50 75 100 125 150 175 0 2 4 6 12 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 05-Mar-18 Document Number: 89072 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20200C-E3, VF20200C-E3, VB20200C-E3, VI20200C-E3 www.vishay.com Vishay General Semiconductor 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Junction to Case V20200C 1 0.01 1.6 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 100 TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C 0.1 0.01 TA = 25 °C 0.001 0.0001 10 20 30 40 50 60 70 80 90 100 Junction to Case VF20200C 1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 7 - Typical Transient Thermal Impedance Per Diode Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Per Diode     Revision: 05-Mar-18 Document Number: 89072 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20200C-E3, VF20200C-E3, VB20200C-E3, VI20200C-E3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.161 (4.08) 0.139 (3.53) 0.113 (2.87) 0.103 (2.62) PIN 1 2 3 0.635 (16.13) 0.625 (15.87) 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.603 (15.32) 0.573 (14.55) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 05-Mar-18 Document Number: 89072 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20200C-E3, VF20200C-E3, VB20200C-E3, VI20200C-E3 www.vishay.com Vishay General Semiconductor TO-262AA 0.411 (10.45) 0.380 (9.65) 0.950 (24.13) 0.920 (23.37) 1 PIN 2 3 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.401 (10.19) 0.381 (9.68) 0.022 (0.56) 0.014 (0.35) Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 05-Mar-18 Document Number: 89072 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000
V20200C-E3/4W 价格&库存

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V20200C-E3/4W
  •  国内价格 香港价格
  • 1+23.745181+3.08680
  • 10+15.2940310+1.98818
  • 50+11.6386650+1.51299
  • 100+10.45877100+1.35961
  • 500+8.38926500+1.09058

库存:1499