V20DL45-M3/I

V20DL45-M3, V20DL45HM3 www.vishay.com Vishay General Semiconductor Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.31 V at IF = 5 A FEATURES TMBS® eSMP® Series TO-263AC (SMPD) • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement K • Low forward voltage drop, low power losses • High efficiency operation 1 2 Top View PIN 1 PIN 2 Bottom View K • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 HEATSINK TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 20 A VRRM 45 V IFSM 160 A VF at IF = 20 A (TA = 125 °C) 0.50 V TJ max. 150 °C Package TO-263AC (SMPD) Diode variations Single die Case: TO-263AC (SMPD) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified  (“_X” denotes revision code e.g. A, B,.....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: as marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range SYMBOL V20DL45-M3, V20DL45HM3 UNIT VRRM 45 V IF(AV) (1) 20 A IFSM 160 A TJ, TSTG -40 to +150 °C Note (1) With heatsink Revision: 05-May-15 Document Number: 87786 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20DL45-M3, V20DL45HM3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 10 A TA = 25 °C IF = 20 A Instantaneous forward voltage VF (1) IF = 5 A TA = 125 °C IF = 10 A IF = 20 A TA = 25 °C VR = 45 V Reverse current TYP. MAX. 0.42 - 0.48 - 0.55 0.64 0.31 - 0.38 - 0.50 0.58 - 2.5 20 50 IR (2) TA = 125 °C UNIT V mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width  5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL V20DL45-M3, V20DL45HM3 RJC 1.6 RJA (1)(2) 45 UNIT °C/W Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.54 I 2000/reel 13" diameter plastic tape and reel 0.54 I 2000/reel 13" diameter plastic tape and reel 0.54 I 2000/reel 13" diameter plastic tape and reel V20DL45-M3/I V20DL45HM3/I (1) V20DL45HM3_A/I (1) Note (1) AEC-Q101 qualified 24 14 RthJA=RthJC 20 =1.6oC/W 16 12 RthJA=45oC/W 8 4 D = 0.8 D = 0.5 D = 0.3 12 Average Power Loss (W) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 D = 0.2 D = 1.0 D = 0.1 8 6 T 4 2 D = tp/T tp 0 0 0 25 50 75 100 125 Case Temperature (°C) Fig. 1 - Forward Current Derating Curve 150 0 4 8 12 16 20 24 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Revision: 05-May-15 Document Number: 87786 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20DL45-M3, V20DL45HM3 www.vishay.com Instantaneous Forward Current (A) 100 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Transient Thermal Impedance (°C/W) Vishay General Semiconductor 100 Junction to Ambient 10 1 0.1 0.01 0.1 Instantaneous Forward Voltage (V) 10 100 Fig. 6 - Typical Transient Thermal Impedance Fig. 3 - Typical Instantaneous Forward Characteristics 50 100 TA = 150 °C Thermal Resistance (°C/W) Instantaneous Reverse Current (mA) 1 t - Pulse Duration (s) TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C Epoxy printed circiut board FR4 copper thickness = 70μm 45 40 35 30 25 S(cm 2) 20 0.01 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) 1 2 3 4 5 6 7 Copper Pad Areas (cm 2 ) 8 9 Fig. 7 - Thermal Resistance Junction-to-Ambient vs. Copper Pad Areas Fig. 4 - Typical Reverse Characteristics Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Revision: 05-May-15 Document Number: 87786 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20DL45-M3, V20DL45HM3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-263AC (SMPD) 0.402 (10.20) 0.386 (9.80) 0.059 (1.50) REF. 0.071 (1.80) 0.063 (1.60) 0.020 (0.52) 0.011 (0.27) 0.048 (1.21) 0.032 (0.81) 0.354 (8.99) 0.338 (8.59) 0.509 (12.93) 0.485 (12.33) 0 to 0.01 (0 to 0.254) 0.069 (1.74) 0.053 (1.34) 0.063 (1.60) 0.047 (1.20) 0.020 (0.52) 0.011 (0.27) 0.052 (1.23) 0.028 (0.72) 0.200 NOM. (5.08) Mounting Pad Layout 0.420 (10.66) MIN. 0.339 (8.60) 0.323 (8.20) 0.276 (7.00) 0.260 (6.60) 0.330 REF. (8.38) 0.194 (4.93) NOM. 0.604 (15.33) 0.525 (13.33) 0.120 (3.05) REF. 0.080 (2.03) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 05-May-15 Document Number: 87786 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000