V20DM100C-M3/I

V20DM100C www.vishay.com Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at IF = 5.0 A FEATURES eSMP® Series SMPD (TO-263AC) • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement K • Low forward voltage drop, low power losses • High efficiency operation 1 • Meets MSL level 1, per LF maximum peak of 260 °C 2 Top View Bottom View J-STD-020, • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode 1 K Anode 2 Cathode DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and automotive application. MECHANICAL DATA IF(AV) 2 x 10 A VRRM 100 V IFSM 150 A VF at IF = 10 A (TA = 125 °C) 0.64 V TJ max. 175 °C Package SMPD (TO-263AC) Circuit configuration Common cathode Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meet JESD 201 class 2 whisker test Polarity: as marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code UNIT V20DM100C Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) V20DM100C VRRM per device per diode IF(AV) (1) 100 V 20 A 10 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 Operating junction temperature range TJ (2) -40 to +175 Storage temperature range TSTG -55 to +175 A °C Notes (1) Mounted on infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA Revision: 14-Mar-2019 Document Number: 87575 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20DM100C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A Instantaneous forward voltage per diode TYP. TA = 25 °C IF = 10 A VF (1) IF = 5 A TA = 25 °C VR = 70 V TA = 125 °C Reverse current at rated VR per diode TA = 25 °C VR = 100 V 0.59 - 0.74 0.82 0.53 - 0.64 0.71 0.01 - IR (2) 1.6 - - 0.2 3 8 950 - UNIT mA TA = 125 °C 4.0 V, 1 MHz MAX. V TA = 125 °C IF = 10 A Typical junction capacitance SYMBOL CJ pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per device SYMBOL V20DM100C RJC(1) 1.8 RJA (2)(3) 58 UNIT °C/W Notes (1) Mounted on infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA - junction-to-ambient (3) Free air, without heatsink ORDERING INFORMATION (Example) PREFERRED P/N V20DM100C-M3/I V20DM100CHM3/I (1) UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.55 I 2000/reel 13" diameter plastic tape and reel 0.55 I 2000/reel 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 14-Mar-2019 Document Number: 87575 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20DM100C www.vishay.com Vishay General Semiconductor 25 Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) RthJC = 1.8 °C/W 20 15 10 RthJA = 58 °C/W 5 0 0 25 50 75 100 125 150 100 TJ = 175 °C 10 1 0.001 TJ = 25 °C 0.0001 0.00001 TJ = -40 °C 0.000001 10 175 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Case Temperature (°C) Fig. 4 - Typical Reverse Leakage Characteristics 10 000 10 D = 0.8 8 Junction Capacitance (pF) Average Power Loss (W) TJ = 150 °C 0.01 Fig. 1 - Maximum Forward Current Derating Curve D = 0.5 D = 0.3 6 D = 0.2 4 D = 1.0 D = 0.1 T 2 D = tp/T TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 tp 10 0 0 2 4 6 8 10 0.1 12 1 Average Forward Current (A) Transient Thermal Impedance (°C/W) TJ = 175 °C 10 TJ = 150 °C TJ = 125 °C TJ = 100 °C 0.1 TJ = 25 °C TJ = -40 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 100 Fig. 5 - Typical Junction Capacitance 100 1 10 Reverse Voltage (V) Fig. 2 - Average Power Loss Characteristics Instantaneous Forward Current (A) TJ = 100 °C TJ = 125 °C 0.1 1.4 1.6 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics 100 Junction-to-ambient 10 1 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 14-Mar-2019 Document Number: 87575 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20DM100C www.vishay.com Vishay General Semiconductor Thermal Resistance (°C/W) 65 Epoxy printed circuit board FR4 copper thickness = 70 μm 60 55 50 45 40 S (cm2) 35 30 25 1 2 3 4 5 6 7 Copper Pad Areas (cm2) 8 9 Fig. 7 - Thermal Resistance Junction-to-Ambient vs. Copper Pad Areas PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMPD (TO-263AC) 0.402 (10.20) 0.386 (9.80) 0.059 (1.50) REF. 0.071 (1.80) 0.063 (1.60) 0.020 (0.52) 0.011 (0.27) 0.048 (1.21) 0.032 (0.81) 0.354 (8.99) 0.338 (8.59) 0.509 (12.93) 0.485 (12.33) 0 to 0.01 (0 to 0.254) 0.069 (1.74) 0.053 (1.34) 0.020 (0.52) 0.011 (0.27) 0.052 (1.23) 0.028 (0.72) 0.063 (1.60) 0.047 (1.20) 0.200 NOM. (5.08) Mounting Pad Layout 0.420 (10.66) MIN. 0.339 (8.60) 0.323 (8.20) 0.276 (7.00) 0.260 (6.60) 0.330 REF. (8.38) 0.194 NOM. (4.93) 0.604 (15.33) 0.525 (13.33) 0.120 (3.05) REF. 0.080 (2.03) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 14-Mar-2019 Document Number: 87575 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000