V20M120CHM3/4W

V20M120C, VI20M120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES TMBS ® TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses K • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 3 1 1 2 3 VI20M120C V20M120C PIN 1 PIN 2 PIN 1 PIN 2 PIN 3 CASE PIN 3 K TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 120 V IFSM 120 A VF at IF = 10 A 0.64 V Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker testt TJ max. 175 °C Package TO-220AB, TO-262AA Diode variations Common cathode per Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) VRRM per device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Voltage rate of change (rated VR) Operating junction and storage temperature range IF(AV) V20M120C VI20M120C 120 UNIT V 20 10 A IFSM 120 dV/dt 10 000 V/μs TJ, TSTG -40 to +175 °C Revision: 23-Feb-18 Document Number: 89463 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20M120C, VI20M120C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A Instantaneous forward voltage per diode SYMBOL 0.91 0.55 - 0.64 0.72 TA = 25 °C 3 - μA TA = 125 °C 1.5 - mA TA = 125 °C IF = 10 A VR = 90 V Reverse current per diode VR = 120 V UNIT 0.65 VF (1) IF = 5 A MAX. 0.82 TA = 25 °C IF = 10 A TYP. TA = 25 °C IR (2) TA = 125 °C V - 700 μA 4 25 mA V20M120C VI20M120C UNIT Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL per diode Typical thermal resistance (1) per device per device 2.8 RJC RJA (2) 1.6 45 °C/W 55 Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient dP /dT < 1/R D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V20M120C-M3/4W 1.88 4W 50/tube Tube TO-262AA VI20M120C-M3/4W 1.45 4W 50/tube Tube Revision: 23-Feb-18 Document Number: 89463 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20M120C, VI20M120C www.vishay.com Vishay General Semiconductor 22 RthJA = RthJC = 1.6 °C/W 20 Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 18 16 14 12 RthJA = 45 °C/W for TO-220AB 10 8 6 4 RthJA = 55 °C/W for TO-262AA 2 0 0 25 50 75 100 125 150 100 TA = 175 °C 10 1 0.01 TA = 25 °C 0.001 0.0001 175 20 7.0 D = 1.0 5.0 4.0 T 3.0 2.0 1.0 D = tp/T tp 0.0 1 2 3 4 5 6 7 8 9 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 11 12 0.1 1 Average Forward Current (A) TA = 175 °C TA = 150 °C TA = 125 °C TA = 100 °C TA = 25 °C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 100 Fig. 5 - Typical Junction Capacitance Per Diode Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 10 Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Per Diode 1 100 10 0 10 80 10 000 D = 0.8 D = 0.1 6.0 60 Fig. 4 - Typical Reverse Characteristics Per Diode Junction Capacitance (pF) Average Power Loss (W) 8.0 40 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve D = 0.5 D = 0.3 D = 0.2 TA = 100 °C 0.1 Case Temperature (°C) 9.0 TA = 150 °C TA = 125 °C 10 Junction to Case 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 23-Feb-18 Document Number: 89463 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20M120C, VI20M120C www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) TO-262AA 0.411 (10.45) 0.380 (9.65) 0.950 (24.13) 0.920 (23.37) 1 PIN 2 3 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.401 (10.19) 0.381 (9.68) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.35) Revision: 23-Feb-18 Document Number: 89463 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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