V20PW45C-M3/I

V20PW45C www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES eSMP® Series • Very low profile - typical height of 1.3 mm Available • Trench MOS Schottky technology • Ideal for automated placement K • Low forward voltage drop, low power losses • High efficiency operation 1 • Meets MSL level 1, per LF maximum peak of 260 °C 2 • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 SlimDPAK (TO-252AE) PIN 1 PIN 2 J-STD-020, K • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 HEATSINK LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS 3D 3D For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. 3D Models MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 45 V Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified IFSM 150 A VF at IF = 10 A (TA = 125 °C) 0.44 V TJ max. 150 °C Package SlimDPAK (TO-252AE) Circuit configuration Common cathode Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code UNIT V20PW45C Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) V20PW45C VRRM per device per diode IF(AV) (1) 45 V 20 A 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 150 A Operating junction temperature range TJ (2) -40 to +150 °C Storage temperature range TSTG -55 to +150 °C Notes (1) With infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R D J θJA Revision: 17-Mar-2022 Document Number: 87672 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20PW45C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5.0 A Instantaneous forward voltage per diode TA = 25 °C IF = 10 A VF (1) IF = 5.0 A TA = 125 °C IF = 10 A Reverse current per diode VR = 45 V Typical junction capacitance per diode 4.0 V, 1 MHz SYMBOL TA = 25 °C TA = 125 °C TYP. MAX. 0.46 - 0.52 0.60 0.36 - 0.44 0.52 - 1 6 20 1560 - IR (2) CJ UNIT V mA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width ≤ 5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL V20PW45C RθJA (1)(2) 55 RθJM (3) 1.8 UNIT °C/W Notes (1) The heat generated must be less than thermal conductivity from junction-to-ambient: dP /dT < 1/R D J θJA (2) Free air, mounted on recommended copper pad area; thermal resistance R θJA - junction to ambient (3) Mounted on infinite heat sink; thermal resistance R θJM - junction-to-mount ORDERING INFORMATION (Example) PREFERRED P/N BASE QUANTITY DELIVERY MODE V20PW45C-M3/I UNIT WEIGHT (g) PREFERRED PACKAGE CODE 0.20 I 4500 13" diameter plastic tape and reel V20PW45CHM3/I (1) 0.20 I 4500 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) Revision: 17-Mar-2022 Document Number: 87672 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20PW45C www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10000 100 2nd line Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) Axis Title 25.0 TM = 132 °C, RthJM =1.8 °C/W 20.0 15.0 10.0 TA = 25 °C, RthJA = 55 °C/W 5.0 10 1 0.01 TJ = 25 °C 0.001 0.0001 100 TJ = -40 °C 10 0.00001 0 0 25 50 75 100 125 10 150 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Mount Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 10 000 Junction Capacitance (pF) 8.0 Average Power Loss (W) 1000 TJ = 150 °C TJ = 125 °C TJ = 100 °C 0.1 D = 0.8 6.0 D = 0.5 D = 0.3 4.0 D = 0.2 D = 1.0 T D = 0.1 2.0 D = tp/T TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 tp 1 0.0 0 2 4 6 8 10 0.1 12 1 Average Forward Current (A) 10 100 Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 10000 1000 10 TJ = 125 °C 1st line 2nd line Instantaneous Forward Current (A) TJ = 150 °C TJ = 100 °C 100 1 TJ = 25 °C TJ = -40 °C 10 0.1 0 0.2 0.4 0.6 0.8 1.0 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Transient Thermal Impedance (°C/W) Axis Title 100 100 Junction to Ambient 10 Junction to Mount 1 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 17-Mar-2022 Document Number: 87672 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20PW45C www.vishay.com Vishay General Semiconductor Thermal Resistance (°C/W) 80 Epoxy printed circuit board FR4 copper thickness = 70 μm 70 60 50 40 30 20 10 S (cm2) 0 0 1 2 3 4 5 6 Copper Pad Areas 7 8 9 10 (cm2) Fig. 7 - Typical Resistance Junction to Ambient vs. Copper Pad Areas PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SlimDPAK (TO-252AE) 0.055 (1.40) 0.047 (1.20) 0.249 (6.32) 0.239 (6.08) 0.016 (0.41) 0.010 (0.25) 0.028 (0.70) 0.012 (0.30) 0.265 (6.72) 0.255 (6.48) 0.370 (9.40) 0.339 (8.60) 0.008 0.000 0.055 0.039 0.090 NOM. (2.29) (0.20) (0.00) (1.40) (1.00) 0.180 NOM. (4.57) Mounting Pad Layout 0.240 MIN. (6.10) 0.224 (5.70) 0.209 (5.30) 0.205 NOM. (5.20) 0.235 MIN. (5.97) 0.386 REF. (9.80) 0.075 MIN. (1.90) 0.035 (0.90) 0.028 (0.70) 0.090 NOM. (2.29) 0.055 MIN. (1.40) Revision: 17-Mar-2022 Document Number: 87672 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000