V20PWM60-M3/I

V20PWM60 www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.37 V at IF = 5 A FEATURES eSMP® Series • Very low profile - typical height of 1.3 mm • Trench MOS Schottky technology K • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation 1 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 2 • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 SlimDPAK (TO-252AE) PIN 1 PIN 2 K • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 HEATSINK DESIGN SUPPORT TOOLS click logo to get started TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. Models Available MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 60 V IFSM 200 A VF at IF = 20 A (TA = 125 °C) 0.58 V TJ max. 175 °C Package SlimDPAK (TO-252AE) Circuit configuration Single Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage V20PWM60 UNIT V20PWM60 VRRM 60 V IF(AV) (1) 20 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A Operating junction temperature range TJ (2) -40 to +175 °C Storage temperature range TSTG -55 to +175 °C Maximum average forward rectified current (Fig. 1) Notes (1) With infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R D J JA Revision: 11-Feb-2019 Document Number: 87692 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20PWM60 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5.0 A IF = 10 A Instantaneous forward voltage per diode TA = 25 °C IF = 20 A VF (1) IF = 5.0 A TA = 125 °C IF = 10 A IF = 20 A Reverse current per diode VR = 60 V Typical junction capacitance 4.0 V, 1 MHz TA = 25 °C TA = 125 °C TYP. MAX. 0.48 - 0.54 - 0.62 0.70 0.37 - 0.45 - 0.58 0.66 - 1.2 8 25 2320 - IR (2) CJ UNIT V mA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width  5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL V20PWM60 RJA (1)(2) 55 RJM (3) 1.8 UNIT °C/W Notes (1) The heat generated must be less than thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, mounted on recommended copper pad area; thermal resistance R JA - junction to ambient (3) Mounted on infinite heat sink; thermal resistance R JM - junction-to-mount ORDERING INFORMATION (Example) PREFERRED P/N BASE QUANTITY DELIVERY MODE V20PWM60-M3/I UNIT WEIGHT (g) PREFERRED PACKAGE CODE 0.20 I 4500 13" diameter plastic tape and reel V20PWM60HM3/I (1) 0.20 I 4500 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) Revision: 11-Feb-2019 Document Number: 87692 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20PWM60 www.vishay.com Vishay General Semiconductor 25 TM = 152 °C, RthJM = 1.8 °C/W 20 15 10 TA = 25 °C, RthJA = 55 °C/W 5 0 0 25 50 75 100 1000 Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 125 150 100 TJ = 175 °C TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C 0.1 0.01 TJ = 25 °C 0.001 175 10 Mount Temperature (°C) 20 30 40 50 60 10 000 Junction Capacitance (pF) Average Power Loss (W) D = 0.5 D = 1.0 10.0 D = 0.2 8.0 D = 0.1 6.0 T 4.0 2.0 D = tp/T 1000 100 10 tp 1 0.0 0 2 4 6 8 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance Transient Thermal Impedance (°C/W) TJ = 175 °C TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 TJ = 25 °C 0.1 0 0.1 10 12 14 16 18 20 22 24 100 Instantaneous Forward Current (A) 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.8 D = 0.3 90 Fig. 4 - Typical Reverse Leakage Characteristics 16.0 12.0 80 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve 14.0 70 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 100 Junction to Ambient 10 Junction to Mount 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 11-Feb-2019 Document Number: 87692 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20PWM60 www.vishay.com Vishay General Semiconductor Thermal Resistance (°C/W) 80 Epoxy printed circuit board FR4 copper thickness = 70 μm 70 60 50 40 30 20 10 S (cm2) 0 0 1 2 3 4 5 6 7 8 9 10 Copper Pad Areas (cm2) Fig. 7 - Typical Resistance Junction to Ambient vs. Copper Pad Areas PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SlimDPAK (TO-252AE) 0.055 (1.40) 0.047 (1.20) 0.249 (6.32) 0.239 (6.08) 0.016 (0.41) 0.010 (0.25) 0.028 (0.70) 0.012 (0.30) 0.265 (6.72) 0.255 (6.48) 0.370 (9.40) 0.339 (8.60) 0.008 0.000 0.055 0.039 0.090 NOM. (2.29) (0.20) (0.00) (1.40) (1.00) 0.180 NOM. (4.57) Mounting Pad Layout 0.240 MIN. (6.10) 0.224 (5.70) 0.209 (5.30) 0.205 NOM. (5.20) 0.235 MIN. (5.97) 0.386 REF. (9.80) 0.075 MIN. (1.90) 0.035 (0.90) 0.028 (0.70) 0.090 NOM. (2.29) 0.055 MIN. (1.40) Revision: 11-Feb-2019 Document Number: 87692 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000