V20PWM63-M3/I

V20PWM63 www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES eSMP® Series • Very low profile - typical height of 1.3 mm Available • Trench MOS Schottky technology K • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation 1 • Meets MSL level 1, per LF maximum peak of 260 °C 2 • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 SlimDPAK (TO-252AE) PIN 1 PIN 2 J-STD-020, K • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 HEATSINK LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. 3D 3D 3D Models MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 60 V IFSM 200 A VF at IF = 20 A (TJ = 125 °C) 0.55 V TJ max. 175 °C Package SlimDPAK (TO-252AE) Circuit configuration Single Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage V20PWM63 UNIT V20PWM63 VRRM 60 V IF(AV) (1) 20 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A Operating junction temperature range TJ (2) -40 to +175 °C Storage temperature range TSTG -55 to +175 °C Maximum average forward rectified current (Fig. 1) Notes (1) With infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R D J θJA Revision: 08-Oct-2021 Document Number: 98257 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20PWM63 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5.0 A IF = 10 A Instantaneous forward voltage TJ = 25 °C IF = 20 A VF (1) IF = 5.0 A TJ = 125 °C IF = 10 A IF = 20 A Reverse current VR = 60 V Typical junction capacitance 4.0 V, 1 MHz TJ = 25 °C TJ = 125 °C IR (2) CJ TYP. MAX. 0.49 - 0.54 - 0.61 0.67 0.39 - 0.45 - 0.55 0.60 - 0.035 2.2 6.5 3000 - UNIT V mA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width ≤ 5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL V20PWM63 RθJA (1)(2) 65 RθJM (3) 1.8 UNIT °C/W Notes (1) The heat generated must be less than thermal conductivity from junction-to-ambient: dP /dT < 1/R D J θJA (2) Free air, mounted on recommended copper pad area; thermal resistance R θJA - junction to ambient (3) Mounted on infinite heat sink; thermal resistance R θJM - junction-to-mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V20PWM63-M3/I 0.20 I 4500 13" diameter plastic tape and reel V20PWM63HM3/I (1) 0.20 I 4500 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) Revision: 08-Oct-2021 Document Number: 98257 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20PWM63 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10000 1000 15 10 100 RthJA = 65 °C/W 5 10 1 TJ = 125 °C 0.01 0.001 10 0 25 50 75 100 125 150 TJ = -40 °C 10 0.000001 175 10 20 30 40 50 60 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 10000 10 000 10000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.8 14.0 1000 10.0 D = 1.0 D = 0.2 8.0 6.0 D = 0.1 100 T 4.0 2.0 D = tp/T 4 6 100 100 10 10 10 2 1000 tp 0 0 1000 1st line 2nd line D = 0.3 2nd line Junction Capacitance (pF) D = 0.5 12.0 1st line 2nd line 0.1 8 10 12 14 16 18 20 22 24 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance TJ = 150 °C 1st line 2nd line 1000 TJ = 100 °C TJ = 125 °C 100 1 TJ = 25 °C TJ = -40 °C 10 0.1 0 0.2 0.4 0.6 0.8 1.0 Junction to Ambient 10 1000 1 100 1st line 2nd line TJ = 175 °C 10 10000 100 10000 100 2nd line Transient Thermal Impedance (°C/W) 2nd line Average Power Loss (W) 70 Mount Temperature (°C) 16.0 2nd line Instantaneous Forward Current (A) 100 TJ = 25 °C 0.0001 0.00001 0 1000 TJ = 175 °C TJ = 150 °C TJ = 100 °C 0.1 1st line 2nd line TM measured at cathode terminal mount typical values 2nd line Instantaneous Reverse Current (mA) RthJM = 1.8 °C/W 20 10000 100 1st line 2nd line 2nd line Average Forward Rectified Current (A) 25 0.1 0.01 10 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 08-Oct-2021 Document Number: 98257 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20PWM63 www.vishay.com Vishay General Semiconductor 10000 80 Epoxy printed circuit board FR4 copper thickness = 70 µm 60 1000 50 1st line 2nd line 2nd line Thermal Resistance (°C/W) 70 40 30 100 20 10 S (cm2) 10 0 0 1 2 3 4 5 6 7 8 9 10 Copper Pad Areas (cm2) Fig. 7 - Typical Resistance Junction to Ambient vs. Copper Pad Areas PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SlimDPAK (TO-252AE) 0.055 (1.40) 0.047 (1.20) 0.249 (6.32) 0.239 (6.08) 0.016 (0.41) 0.010 (0.25) 0.028 (0.70) 0.012 (0.30) 0.265 (6.72) 0.255 (6.48) 0.370 (9.40) 0.339 (8.60) 0.008 0.000 0.055 0.039 0.090 NOM. (2.29) (0.20) (0.00) (1.40) (1.00) 0.180 NOM. (4.57) Mounting Pad Layout 0.240 MIN. (6.10) 0.224 (5.70) 0.209 (5.30) 0.205 NOM. (5.20) 0.235 MIN. (5.97) 0.386 REF. (9.80) 0.075 MIN. (1.90) 0.035 (0.90) 0.028 (0.70) 0.090 NOM. (2.29) 0.055 MIN. (1.40) Revision: 08-Oct-2021 Document Number: 98257 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000