V2P6X-M3/I

V2P6X www.vishay.com Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier FEATURES eSMP ® Series • Low profile package Available • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 SMP (DO-220AA) Cathode Anode LINKS TO ADDITIONAL RESOURCES 3D 3D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. 3D Models PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 2.0 A VRRM 60 V IFSM 50 A VF at IF = 2.0 A 0.51 V TJ max. 175 °C Package SMP (DO-220AA) Circuit configuration Single Case: SMP (DO-220AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code V2P6X UNIT 26X Maximum repetitive peak reverse voltage VRRM 60 V Maximum DC forward current IF (1) 2 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A Operating junction temperature range TJ (2) -40 to +175 °C Storage temperature range TSTG -55 to +175 °C Notes (1) Free air, mounted on recommended copper pad area (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J θJA Revision: 08-Mar-2022 Document Number: 87457 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V2P6X www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1 A IF = 2 A Instantaneous forward voltage IF = 1 A IF = 2 A Reverse current VR = 60 V Typical junction capacitance 4.0 V, 1 MHz SYMBOL TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TA = 125 °C TYP. MAX. 0.48 - 0.56 0.64 0.40 - 0.51 0.59 IR (2) CJ - 0.1 1.0 2.0 240 - UNIT V mA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width ≤ 5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER Typical thermal resistance SYMBOL V2P6X RθJA (1) 125 RθJM (2) 15 UNIT °C/W Notes (1) Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance R θJA - junction-to-ambient (2) Units mounted on recommended copper pad areas; R θJM - junction-to-mount ORDERING INFORMATION (Example) PREFERRED P/N V2P6X-M3/H UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.024 H 3000 7" diameter plastic tape and reel 13" diameter plastic tape and reel V2P6X-M3/I 0.024 I 10 000 V2P6XHM3/H (1) 0.024 H 3000 7" diameter plastic tape and reel V2P6XHM3/I (1) 0.024 I 10 000 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 08-Mar-2022 Document Number: 87457 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V2P6X www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title Axis Title 1.8 1.6 1000 1.4 1.2 RthJA = 125 °C/W 1.0 0.8 100 0.6 0.4 0 0 25 50 75 100 10 TJ = 150 °C TJ = 125 °C 1 0.1 1000 TJ = 100 °C 0.01 0.001 100 TJ = 25 °C 0.0001 0.00001 TM measured at cathode terminal mount typical values 0.2 TJ = 175 °C 1st line 2nd line RthJM = 15 °C/W 2.0 2nd line Instantaneous Reverse Current (mA) 2.2 10000 100 10000 1st line 2nd line 2nd line Average Forward Rectified Current (A) 2.4 150 TJ = -40 °C 0.000001 10 125 175 20 40 10 60 80 Mount Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Axis Title Axis Title 10000 1.4 1000 10000 D = 0.8 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 D = 0.2 1st line 2nd line D = 1.0 0.8 D = 0.1 0.6 100 0.4 T 1000 1st line 2nd line D = 0.3 1.0 2nd line Junction Capacitance (pF) D = 0.5 1.2 2nd line Average Power Loss (W) 100 100 100 0.2 D = tp/T tp 10 0 10 10 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 1 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance Axis Title Axis Title TJ = 125 °C 1000 TJ = 150 °C 1 TJ = 100 °C 100 TJ = 25 °C TJ = -40 °C 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 2nd line Transient Thermal Impedance (°C/W) TJ = 175 °C 10000 1000 10000 Junction-to-ambient 100 1000 10 100 1st line 2nd line 10 2nd line Instantaneous Forward Current (A) 10 1 0.01 10 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 08-Mar-2022 Document Number: 87457 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V2P6X www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMP (DO-220AA) 0.012 (0.30) REF. Cathode Band 0.053 (1.35) 0.041 (1.05) 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.036 (0.91) 0.024 (0.61) 0.103 (2.60) 0.087 (2.20) 0.032 (0.80) 0.016 (0.40) 0.158 (4.00) 0.146 (3.70) Mounting pad layout 0.105 (2.67) 0.013 (0.35) 0.004 (0.10) 0.025 0.030 (0.635) (0.762) 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.018 (0.45) 0.000 (0.00) 0.006 (0.15) 0.100 (2.54) 0.050 (1.27) Revision: 08-Mar-2022 Document Number: 87457 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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