V30100CI-M3/P

V30100CI www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A FEATURES TMBS ® • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 3 TYPICAL APPLICATIONS 1 PIN 1 PIN 2 PIN 3 CASE For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade 2 x 15 A VRRM 100 V IFSM 160 A VF at IF = 15 A (125 °C) 0.62 V TJ max. 150 °C Package TO-220AB Circuit configuration Common cathode Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum DC reverse voltage Maximum average forward rectified current (fig. 1) per device per diode SYMBOL V30100CI VRRM 100 VDC 80 IF(AV) 30 15 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 160 Operating junction temperature range TJ (1) -40 to +150 Storage temperature range TSTG -55 to +150 UNIT V A A °C Note (1) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT