V30D202CHM3/I

V30D202C www.vishay.com Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier FEATURES eSMP® Series SMPD (TO-263AC) • Trench MOS Schottky technology generation 2 Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement K • Low forward voltage drop, low power losses • High efficiency operation 1 • Meets MSL level 1, per LF maximum peak of 260 °C 2 Top View Bottom View J-STD-020, • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 V30D202C PIN 1 K PIN 2 HEATSINK TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. ADDITIONAL RESOURCES 3D 3D 3D Models MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 15.0 A VRRM 200 V IFSM 260 A Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (X_denotes revision code e.g. A, B, ...) VF at IF = 15.0 A (TA = 125 °C) 0.66 V TJ max. 175 °C Package SMPD (TO-263AC) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Circuit configuration Common cathode Polarity: As marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode SYMBOL V30D202C UNIT VRRM 200 V IF(AV) 30 15 A Maximum DC reverse voltage VDC 160 V Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 260 A dV/dt 10 000 V/μs TJ, TSTG -40 to +175 °C Voltage rate of change (rated VR) Operating junction and storage temperature range Revision: 28-Feb-2020 Document Number: 87748 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30D202C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. IF = 5 A IF = 10 A TA = 25 °C IF = 15 A Instantaneous forward voltage per diode VF (1) IF = 5 A IF = 10 A TA = 125 °C IF = 15 A VR = 160 V Reverse current at rated VR per diode VR = 200 V TA = 25 °C TA = 125 °C TA = 25 °C IR (2) TA = 125 °C MAX. 0.72 - 0.78 - 0.8 0.88 UNIT V 0.56 - 0.64 - 0.66 0.73 1 - μA 2 - mA - 200 μA 5 25 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL per diode Typical thermal resistance per device per device V30D202C RθJC RθJA UNIT 2.0 1.1 (1)(2) °C/W 50 Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J θJA - junction-to-mount (2) Free air, without heatsink ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE SMPD (TO-263AC) V30D202C-M3/I 0.55 I 2000/reel 13" diameter plastic tape and reel SMPD (TO-263AC) V30D202CHM3_A/I (1) 0.55 I 2000/reel 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified 35 RthJC = 1.1 °C/W 30 Average Power Loss (W) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 25 20 15 10 RthJA = 50 °C/W 5 0 0 25 50 75 100 125 150 Case Temperature (°C) Fig. 1 - Forward Current Derating Curve 175 13.0 12.0 11.0 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 D = 0.8 D = 0.5 D = 0.3 D = 1.0 D = 0.2 D = 0.1 T D = tp/T 0 2 4 6 8 10 12 14 tp 16 18 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Revision: 28-Feb-2020 Document Number: 87748 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30D202C www.vishay.com Vishay General Semiconductor 10000 1000 10 TJ = 125 °C TJ = 150 °C 1st line 2nd line Instantaneous Forward Current (A) TJ = 175 °C TJ = 100 °C 100 1 TJ = 25 °C TJ = -40 °C 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 Transient Thermal Impedance (°C/W) Axis Title 100 1.4 100 Junction to Ambient 10 1 0.1 0.01 0.1 Instantaneous Forward Voltage (V) 1 10 100 t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Axis Title 1 1000 0.1 TJ = 150 °C TJ = 100 °C 0.01 TJ = 175 °C TJ = 125 °C 0.001 TJ = 25 °C 0.0001 TJ = -40 °C 100 10 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Thermal Resistance (°C/W) 2nd line Instantaneous Reverse Current (mA) 10 0.00001 Junction Capacitance (pF) 60 10000 100 Epoxy printed circuit board FR4 copper thickness = 70 μm 55 50 45 40 35 30 25 S (cm2) 20 1 2 3 4 5 6 7 8 9 Copper Pad Areas (cm2) Fig. 7 - Thermal Resistance Junction-to-Ambient vs. Copper Pad Areas TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Revision: 28-Feb-2020 Document Number: 87748 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30D202C www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMPD (TO-263AC)    5()            WR   WR             120     Mounting Pad Layout 0,1       5()   120   5() 0,1     Revision: 28-Feb-2020 Document Number: 87748 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000