V30D45C-M3/I

V30D45C www.vishay.com Vishay General Semiconductor Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A FEATURES eSMP® Series SMPD (TO-263AC) • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement K • Low forward voltage drop, low power losses • High efficiency operation 1 • Meets MSL level 1, per LF maximum peak of 260 °C 2 Top View Bottom View J-STD-020, • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode 1 K Anode 2 Cathode TYPICAL APPLICATIONS ADDITIONAL RESOURCES For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. 3D 3D 3D Models MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 45 V IFSM 200 A VF at IF = 15 A 0.40 V TJ max. 150 °C Package SMPD (TO-263AC) Circuit configuration Common cathode Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: as marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode Peak forward surge current 10 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range SYMBOL V30D45C UNIT VRRM 45 V IF(AV) 30 15 A IFSM 200 A TJ, TSTG -40 to +150 °C Revision: 20-Jan-2020 Document Number: 89994 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30D45C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5.0 A IF = 7.5 A TA = 25 °C IF = 15 A Instantaneous forward voltage per diode VF (1) IF = 5.0 A TA = 125 °C IF = 7.5 A IF = 15 A TA = 25 °C VR = 45 V Reverse current per diode IR (2) TA = 125 °C TYP. MAX. 0.42 - 0.44 - 0.49 0.57 0.30 - UNIT V 0.33 - 0.40 0.48 - 1500 μA 12 50 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width ≤ 5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL per diode Typical thermal resistance V30D45C RθJC per device per device RθJA UNIT 1.6 0.9 (1)(2) °C/W 45 Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J θJA (2) Free air, without heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V30D45C-M3/I 0.55 I 2000/reel 13" diameter plastic tape and reel V30D45CHM3_A/I (1) 0.55 I 2000/reel 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified 35 8 D = 0.8 RthJA = RthJC = 0.9 °C/W 30 7 Average Power Loss (W) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 25 20 15 TA, RthJA = 45 °C/W 10 5 D = 0.5 6 D = 1.0 D = 0.3 5 D = 0.2 4 D = 0.1 3 T 2 1 D = tp/T tp 0 0 0 25 50 75 100 125 150 Case Temperature (°C) (D = duty cycle = 0.5) Fig. 1 - Forward Current Derating Curve 0 2 4 6 8 10 12 14 16 18 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 20-Jan-2020 Document Number: 89994 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30D45C www.vishay.com Vishay General Semiconductor Axis Title 10000 Transient Thermal Impedance (°C/W) 2nd line Instantaneous Forward Current (A) 100 TJ = 150 °C 10 1000 TJ = 125 °C TJ = 100 °C 1 100 TJ = 25 °C TJ = -40 °C 0.1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 100 Junction to Ambient 10 1 0.1 0.01 0.1 Instantaneous Forward Voltage (V) 1 10 100 t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Axis Title 10000 10 1 1000 TJ = 150 °C TJ = 125 °C TJ = 100 °C 0.1 0.01 100 TJ = 25 °C 0.001 TJ = -40 °C 0.0001 10 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Thermal Resistance (°C/W) 50 1st line 2nd line Instantaneous Reverse Current (mA) 100 Epoxy printed circuit board FR4 copper thickness = 70 µm 45 40 35 30 25 S (cm2) 20 1 2 3 4 5 6 7 8 9 Copper Pad Areas (cm 2 ) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 7 - Thermal Resistance Junction-to-Ambient vs. Copper Pad Areas Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Per Diode Revision: 20-Jan-2020 Document Number: 89994 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30D45C www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMPD (TO-263AC) 0.402 (10.20) 0.386 (9.80) 0.059 (1.50) REF. 0.071 (1.80) 0.063 (1.60) 0.020 (0.52) 0.011 (0.27) 0.048 (1.21) 0.032 (0.81) 0.354 (8.99) 0.338 (8.59) 0.509 (12.93) 0.485 (12.33) 0 to 0.01 (0 to 0.254) 0.069 (1.74) 0.053 (1.34) 0.063 (1.60) 0.047 (1.20) 0.020 (0.52) 0.011 (0.27) 0.052 (1.23) 0.028 (0.72) 0.200 NOM. (5.08) Mounting Pad Layout 0.420 (10.66) MIN. 0.339 (8.60) 0.323 (8.20) 0.276 (7.00) 0.260 (6.60) 0.330 REF. (8.38) 0.194 (4.93) NOM. 0.604 (15.33) 0.525 (13.33) 0.120 (3.05) REF. 0.080 (2.03) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 20-Jan-2020 Document Number: 89994 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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