V30DL45
www.vishay.com
Vishay General Semiconductor
Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.28 V at IF = 5 A
FEATURES
eSMP® Series
SMPD (TO-263AC)
• Trench MOS Schottky technology
Available
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
K
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per
LF maximum peak of 260 °C
1
2
Top View
Bottom View
J-STD-020,
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Anode 1
K
Anode 2
Cathode
TYPICAL APPLICATIONS
ADDITIONAL RESOURCES
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
3D 3D
3D Models
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
45 V
IFSM
240 A
VF at IF = 30 A (TA = 125 °C)
0.51 V
TJ max.
150 °C
Package
SMPD (TO-263AC)
Circuit configuration
Single
Case: SMPD (TO-263AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
SYMBOL
V30DL45
UNIT
VRRM
45
V
30
A
IFSM
200
A
TJ, TSTG
-40 to +150
°C
IF(AV)
(1)
Note
(1) With heatsink
Revision: 22-Jan-2020
Document Number: 87788
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30DL45
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
0.39
-
IF = 5 A
IF = 15 A
TA = 25 °C
IF = 30 A
Instantaneous forward voltage
VF (1)
IF = 5 A
TA = 125 °C
IF = 15 A
IF = 30 A
TA = 25 °C
VR = 45 V
Reverse current
IR (2)
TA = 125 °C
0.47
-
0.57
0.65
0.28
-
UNIT
V
0.38
-
0.51
0.60
-
3000
μA
27
70
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width ≤ 5 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
V30DL45
RθJC
1.1
RθJA (1)(2)
45
UNIT
°C/W
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
θJA
(2) Free air, without heatsink
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
V30DL45-M3/I
0.54
I
2000/reel
13" diameter plastic tape and reel
V30DL45HM3_A/I (1)
0.54
I
2000/reel
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
35
22
RthJA = RthJC = 1.1 °C/W
25
20
15
RthJA = 45 °C/W
10
D = 0.5
20
30
Average Power Loss (W)
Average Forward Rectified Current (A)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
5
18
D = 0.8
D = 0.3
16
D = 1.0
D = 0.2
14
12
D = 0.1
10
8
T
6
4
2
D = tp/T
tp
0
0
0
25
50
75
100
125
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
150
0
4
8
12
16
20
24
28
32
36
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 22-Jan-2020
Document Number: 87788
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30DL45
www.vishay.com
Vishay General Semiconductor
2nd line
Instantaneous Forward Current (A)
10000
TJ = 150 °C
10
1st line
2nd line
1000
TJ = 125 °C
TJ = 100 °C
1
100
TJ = 25 °C
TJ = -40 °C
0.1
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Transient Thermal Impedance (°C/W)
Axis Title
100
100
Junction to Ambient
10
1
0.1
0.01
0.1
Instantaneous Forward Voltage (V)
1
10
100
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Axis Title
10
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1
1000
0.1
TJ = 25 °C
0.01
0.001
100
TJ = -40 °C
10
20
30
40
50
60
Epoxy printed circiut
board FR4 copper
thickness = 70 μm
45
40
35
30
25
S(cm 2)
0.0001
10
Thermal Resistance (°C/W)
2nd line
Instantaneous Reverse Current (mA)
50
10000
100
70
80
20
1
90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
2
3
4
5
6
7
Copper Pad Areas
(cm 2)
8
9
Fig. 7 - Thermal Resistance Junction-to-Ambient vs.
Copper Pad Areas
Junction Capacitance (pF)
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Revision: 22-Jan-2020
Document Number: 87788
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30DL45
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPD (TO-263AC)
0.402 (10.20)
0.386 (9.80)
0.059 (1.50) REF.
0.071 (1.80)
0.063 (1.60)
0.020 (0.52)
0.011 (0.27)
0.048 (1.21)
0.032 (0.81)
0.354 (8.99)
0.338 (8.59)
0.509 (12.93)
0.485 (12.33)
0 to 0.01
(0 to 0.254)
0.069 (1.74)
0.053 (1.34)
0.063 (1.60)
0.047 (1.20)
0.020 (0.52)
0.011 (0.27)
0.052 (1.23)
0.028 (0.72)
0.200
NOM.
(5.08)
Mounting Pad Layout
0.420 (10.66) MIN.
0.339 (8.60)
0.323 (8.20)
0.276 (7.00)
0.260 (6.60)
0.330
REF.
(8.38)
0.194
(4.93) NOM.
0.604 (15.33)
0.525 (13.33)
0.120 (3.05) REF.
0.080 (2.03) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 22-Jan-2020
Document Number: 87788
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
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Revision: 01-Jan-2019
1
Document Number: 91000
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