V30DL45BP-M3/I

V30DL45BP www.vishay.com Vishay General Semiconductor TMBS® (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 V at IF = 5 A FEATURES eSMP® Series SMPD (TO-263AC) • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement K • Low forward voltage drop, low power losses • High efficiency operation 1 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 2 Top View Bottom View Anode 1 K Anode 2 Cathode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS LINKS TO ADDITIONAL RESOURCES 3D 3D For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade 3D Models PRIMARY CHARACTERISTICS IFSM 200 A Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test VF at IF = 30 A (TA = 125 °C) 0.51 V Polarity: as marked TOP max. (AC model) 150 °C IF(AV) 30 A VRRM 45 V TJ max. (DC forward current) 200 °C Package SMPD (TO-263AC) Circuit configuration Single per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V30DL45BP VRRM 45 V IF(DC) (1) 30 A IFSM 200 A Operating junction temperature range (AC model) TOP -40 to +150 °C Junction temperature in DC forward current without reverse bias, t = ≤ 1 h TJ (2) ≤ 200 °C Maximum repetitive peak reverse voltage Maximum DC forward current (fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load UNIT Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed.2 bypass diode thermal test Revision: 18-Nov-2020 Document Number: 87791 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30DL45BP www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 15 A TA = 25 °C IF = 30 A Instantaneous forward voltage VF (1) IF = 5 A TA = 125 °C IF = 15 A IF = 30 A TA = 25 °C VR = 45 V Reverse current IR (2) TA = 125 °C TYP. MAX. 0.39 - 0.47 - 0.57 0.65 0.28 - 0.38 - 0.51 0.60 - 3 27 70 UNIT V mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL V30DL45BP RθJC 1.1 RθJA (1)(2) 45 UNIT °C/W Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J θJA (2) Free air, without heatsink ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE SMPD (TO-263AC) V30DL45BP-M3/I 0.55 I 2000/reel 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title Axis Title 10000 20.0 RthJM = 1.1 °C/W 25 1000 20 15 RthJA = 45 °C/W 100 10 5 D = 0.3 16.0 D = 0.2 14.0 10.0 D = 0.1 8.0 100 6.0 T 4.0 2.0 10 0 0 25 50 75 100 125 150 1000 D = 1.0 12.0 1st line 2nd line TM measured at cathode terminal mount typical values 10000 D = 0.8 D = 0.5 18.0 2nd line Average Power Loss (W) 30 1st line 2nd line 2nd line Average Forward Rectified Current (A) 35 D = tp/T tp 10 0 0 5 10 15 20 25 30 35 Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 18-Nov-2020 Document Number: 87791 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30DL45BP www.vishay.com Vishay General Semiconductor Axis Title Axis Title 10000 TJ = 100 °C 1 100 TJ = 25 °C TJ = -40 °C 10 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Junction to ambient 10 1000 1 100 1st line 2nd line 1000 TJ = 125 °C 2nd line Transient Thermal Impedance (°C/W) TJ = 150 °C 10 10000 100 1st line 2nd line 2nd line Instantaneous Forward Current (A) 100 10 0.1 0.01 0.8 0.1 1 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Axis Title Axis Title 10000 100 100 10000 Epoxy printed circuit board FR4 copper thickness = 70 µm TJ = 150 °C 1000 1 0.1 TJ = 25 °C 100 0.01 TJ = -40 °C 10 20 30 40 50 60 70 1000 60 50 40 100 30 20 S (cm2) 10 0.001 10 80 1st line 2nd line TJ = 125 °C TJ = 100 °C 2nd line Thermal Resistance (°C/W) 90 10 1st line 2nd line 2nd line Instantaneous Reverse Current (mA) 10 70 80 10 0 1 90 100 2 3 4 5 6 7 8 9 Percent of Rated Peak Reverse Voltage (%) Copper Pad Areas (cm2) Fig. 4 - Typical Reverse Characteristics Fig. 7 - Thermal Resistance Junction-to-Ambient vs. Copper Pad Areas Axis Title 10 000 10000 1000 1st line 2nd line 2nd line Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 100 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Revision: 18-Nov-2020 Document Number: 87791 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30DL45BP www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMPD (TO-263AC)    5()            WR   WR             120     Mounting Pad Layout 0,1       5()   120   5() 0,1     Revision: 18-Nov-2020 Document Number: 87791 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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