V30K45HM3/H

V30K45 www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount (TMBS®) Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5 A FEATURES 1 2 • Trench MOS Schottky technology 3 • Low forward voltage drop, low power losses 4 8 • High efficiency operation • Meets MSL level 1, per LF maximum peak of 260 °C 7 6 5 J-STD-020, • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 FlatPAK 5 x 6 1, 2, 3, 4 Available 5, 6, 7, 8 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS DESIGN SUPPORT TOOLS AVAILABLE 3D 3D For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. 3D Models MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM 45 V IFSM 240 A VF at IF = 30 A (TA = 125 °C) 0.46 V TJ max. 150 °C Package FlatPAK 5 x 6 Circuit configuration Single Case: FlatPAK 5 x 6 Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test  MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current V30K45 UNIT V3045 VRRM 45 IF(AV) (1) 30 IF(AV) (2) 5 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 240 Operating junction temperature range TJ (3) -40 to +150 Storage temperature range TSTG -55 to +150 V A °C Notes (1) With infinite heatsink (2) Free air, mounted on recommended pad area (3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA Revision: 08-Jul-2019 Document Number: 87416 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30K45 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 15 A TA = 25 °C IF = 30 A Instantaneous forward voltage VF (1) IF = 5.0 A IF = 15 A TA = 125 °C IF = 30 A Reverse current VR = 45 V Typical junction capacitance 4.0 V, 1 MHz TA = 25 °C TA = 125 °C TYP. MAX. 0.42 - 0.48 - 0.54 0.63 0.30 - 0.38 - 0.46 0.54 UNIT V - 2 15 55 4000 - pF SYMBOL TYP. MAX. UNIT RJA (1)(2) 75 - RJM (3) 2.5 3.5 IR (2) CJ mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width  5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance °C/W Notes (1) The heat generated must be less than thermal conductivity from junction to ambient: dP /dT < 1/R D J JA (2) Free air, mounted on recommended copper pad area; thermal resistance R JA - junction-to-ambient (3) Mounted on infinite heatsink; thermal resistance R JM - junction-to-mount ORDERING INFORMATION (Example) PREFERRED P/N V30K45-M3/H V30K45-M3/I V30K45HM3/H (1) V30K45HM3/I (1) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.10 H 1500 7" diameter plastic tape and reel 0.10 I 6000 13" diameter plastic tape and reel 0.10 H 1500 7" diameter plastic tape and reel 0.10 I 6000 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) Revision: 08-Jul-2019 Document Number: 87416 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30K45 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title Axis Title 10000 25 1000 20 15 TM measured at cathode terminal mount, typical values 100 RthJA = 75 °C/W 5 10 0 0 25 50 75 100 125 10 TJ = 125 °C 1 TJ = 100 °C 0.1 0.01 TJ = 25 °C 100 0.001 0.0001 TJ = -40 °C 10 0.00001 150 20 40 60 100 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics Axis Title Axis Title 10 000 10000 10000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.8 D = 0.3 1st line 2nd line 1000 D = 1.0 D = 0.2 10.0 100 D = 0.1 T 5.0 D = tp/T 10 15 20 25 100 30 10 100 10 5 1000 tp 0 0 1000 1st line 2nd line 15.0 2nd line Junction Capacitance (pF) D = 0.5 2nd line Average Power Loss (W) 80 Ambient / Mount Temperature (°C) 20.0 0.1 35 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance Axis Title Axis Title 10000 100 1000 10 1st line 2nd line TJ = 125 °C TJ = 100 °C 100 1 TJ = 25 °C TJ = -40 °C 0.1 0 0.2 0.4 0.6 10 0.8 10000 Junction to ambient 1000 1st line 2nd line TJ = 150 °C 2nd line Transient Thermal Impedance (°C/W) 100 2nd line Instantaneous Forward Current (A) 1000 1st line 2nd line 30 2nd line Instantaneous Reverse Current (mA) TJ = 150 °C RthJM = 2.5 °C/W 10 10000 100 1st line 2nd line 2nd line Average Forward Rectified Current (A) 35 10 100 1 0.01 10 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 08-Jul-2019 Document Number: 87416 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30K45 www.vishay.com Vishay General Semiconductor DIMENSIONS in inches (millimeters) 4 x L2 FlatPAK 5 x 6 F2 7 8 M E2 6 (d1) F2 F1 F1 3 4 4 x L1 2 (8 x a) 1 2 1 0.219 (5.550) D2 BOTTOM VIEW TOP VIEW 0.050 (1.270) 0.030 (0.750) PCB FOOTPRINT Θ A c 8x 3 0.039 (1.000) 4 (K) (2 x d2) 0.022 (0.560) 5 0.082 (2.080) 0.259 (6.590) E E1 8xb 6xe 5 (E3) 2 x b1 6 0.191 (4.840) 7 8 0.180 (4.560) 0.030 (0.750) 0.055 (1.400) D D1 SIDE VIEW DIM. INCHES MILLIMETERS MIN. NOM. MAX. MIN. NOM. MAX. 0.035 0.039 0.043 0.89 0.99 1.09 (a) - 0.006 - - 0.15 - b 0.013 0.017 0.020 0.32 0.43 0.52 b1 0.013 0.017 0.020 0.32 0.43 0.52 c 0.008 - 0.014 0.20 - 0.35 D 0.197 0.203 0.209 5.00 5.15 5.30 D1 0.189 0.193 0.197 4.80 4.90 5.00 D2 0.154 0.161 0.169 3.90 4.10 4.30 (d1) - 0.016 - - 0.40 - A (d2) - 0.005 - - 0.125 - E 0.238 0.244 0.250 6.05 6.20 6.35 E1 0.228 0.232 0.236 5.80 5.90 6.00 E2 0.157 0.165 0.173 4.00 4.20 4.40 (E3) - 0.144 - - 3.65 - e 0.050 BSC 1.27 BSC (K) 0.039 - - 1.00 - - L1 0.019 - 0.043 0.48 - 1.10 L2 0.012 - 0.031 0.30 - 0.80 M 0.128 0.138 0.148 3.25 3.50 3.75  0° - 10° 0° - 10° Notes • Dimensioning and tolerancing per ASME Y14.5-2009 • Dimensions D1 and E1 do not include mold flash or gate burrs • Dimension (XX) means reference only Revision: 08-Jul-2019 Document Number: 87416 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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