V30M120M-E3/4W

V30M120M-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES TMBS ® • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS V30M120M PIN 1 PIN 2 PIN 3 CASE For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade 2 x 15 A VRRM 120 V IFSM 120 A VF at IF = 15 A (TA = 125 °C) 0.70 V TJ max. 175 °C Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Package TO-220AB Diode variations Common cathode per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range SYMBOL V30M120M UNIT VRRM 120 V IF(AV) 30 15 A IFSM 120 A dV/dt 10 000 V/μs TJ, TSTG -55 to +175 °C Revision: 11-May-16 Document Number: 89988 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30M120M-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 7.5 A TA = 25 °C IF = 15 A Instantaneous forward voltage per diode VF (1) IF = 5 A IF = 7.5 A TA = 125 °C IF = 15 A VR = 100 V Reverse current per diode VR = 120 V TYP. MAX. 0.64 - 0.73 - 0.98 1.07 0.55 - 0.60 - UNIT V 0.70 0.78 TA = 25 °C 6.0 - μA TA = 125 °C 2.0 - mA - 1000 μA 3.4 26 mA IR (2) TA = 25 °C TA = 125 °C Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL per diode Typical thermal resistance V30M120M 1.8 RJC per device 0.9 RJA (1)(2) per device UNIT °C/W 40 Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient dP /dT < 1/R D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.88 4W 50/tube Tube V30M120M-E3/4W 36 RthJA = RthJC = 0.9 °C/W 32 Average Power Loss (W) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 28 24 20 16 12 TA, RthJA = 40 °C/W 8 4 0 0 25 50 75 100 125 150 175 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 D = 0.3 D = 0.2 D = 0.8 D = 0.5 D = 0.1 D = 1.0 T D = tp/T tp 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 11-May-16 Document Number: 89988 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30M120M-E3 www.vishay.com Vishay General Semiconductor 10 000 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 175 °C TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.1 1 10 Instantaneous Forward Voltage (V) 100 TA = 175 °CTA = 150 °C TA = 125 °C 1 TA = 100 °C 0.1 0.01 TA = 25 °C 0.001 0.0001 20 30 40 50 60 70 80 1000 Fig. 5 - Typical Junction Capacitance Per Diode Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 10 100 Reverse Voltage (V) 90 100 10 Junction to Case 1 0.1 0.01 Percent of Rated Peak Reverse Voltage (%) 0.1 1 10 100 t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Device PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.603 (15.32) 0.573 (14.55) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 11-May-16 Document Number: 89988 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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