V35PW15
www.vishay.com
Vishay General Semiconductor
High Current Density Surface-Mount
TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
FEATURES
eSMP® Series
• Very low profile - typical height of 1.3 mm
Available
• Trench MOS Schottky technology
K
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
1
• Meets MSL level 1, per
LF maximum peak of 260 °C
2
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
SlimDPAK (TO-252AE)
PIN 1
PIN 2
J-STD-020,
K
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
HEATSINK
LINKS TO ADDITIONAL RESOURCES
3D 3D
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications.
3D Models
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
35 A
VRRM
150 V
IFSM
260 A
VF at IF = 35 A (TA = 125 °C)
0.71 V
TJ max.
150 °C
Package
SlimDPAK (TO-252AE)
Circuit configuration
Single
Case: SlimDPAK (TO-252AE)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
V35PW15
UNIT
V35PW15
VRRM
150
V
IF(AV) (1)
35
A
IFSM
260
A
Operating junction temperature range
TJ
(2)
-40 to +150
°C
Storage temperature range
TSTG
-55 to +150
°C
Notes
(1) With infinite heatsink
(2) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R
D
J
JA
Revision: 26-May-2020
Document Number: 87686
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V35PW15
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5.0 A
IF = 17.5 A
Maximum Instantaneous forward voltage
TA = 25 °C
IF = 35 A
VF (1)
IF = 5.0 A
TA = 125 °C
IF = 17.5 A
IF = 35 A
TA = 25 °C
VR = 100 V
TA = 125 °C
Reverse current
TA = 25 °C
VR = 150 V
Typical junction capacitance
IR (2)
TA = 125 °C
4.0 V, 1 MHz
CJ
TYP.
MAX.
0.61
-
0.90
-
1.32
1.40
0.50
-
0.65
-
0.71
0.79
0.01
-
4
-
-
0.25
9
25
1620
-
UNIT
V
mA
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width 5 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
RJA
Typical thermal resistance
V35PW15
(1)(2)
UNIT
55
RJM (3)
°C/W
1.5
Notes
(1) The heat generated must be less than thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
JA
(2) Free air, mounted on recommended copper pad area; thermal resistance R
JA - junction to ambient
(3) Mounted on infinite heatsink; thermal resistance R
JM - junction-to-mount
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
V35PW15-M3/I
0.20
I
4500
13" diameter plastic tape and reel
V35PW15HM3/I (1)
0.20
I
4500
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
(1)
Revision: 26-May-2020
Document Number: 87686
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V35PW15
www.vishay.com
Vishay General Semiconductor
Axis Title
40.0
TM = 109 ƱC, RthJM = 1.5 ƱC/W
35.0
30.0
25.0
20.0
15.0
10.0
TA = 25 ƱC, RthJA = 55 ƱC/W
5.0
0
0
25
50
75
10000
100
2nd line
Instantaneous Reverse Current (mA)
Average Forward Rectified Current (A)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
125
10
1
TJ = 125 °C
0.1
0.01
0.001
TJ = -40 °C
0.0001
150
10
10
20
30
40
50
60
10 000
90 100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.8
Junction Capacitance (pF)
30.0
Average Power Loss (W)
80
Fig. 4 - Typical Reverse Leakage Characteristics
35.0
D = 0.5
25.0
D = 1.0
D = 0.3
20.0
D = 0.2
T
D = 0.1
5.0
D = tp/T
1000
100
10
tp
0.0
1
0
5
10
15
20
25
30
35
0.1
40
1
Average Forward Current (A)
TJ = 150 °C
1st line
2nd line
1000
TJ = 125 °C
TJ = 100 °C
1
100
TJ = 25 °C
TJ = -40 °C
0.1
10
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Transient Thermal Impedance (°C/W)
10000
10
100
1000
Fig. 5 - Typical Junction Capacitance
Axis Title
100
10
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
2nd line
Instantaneous Forward Current (A)
70
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
10.0
100
TJ = 25 °C
Mount Temperature (°C)
15.0
1000
TJ = 150 °C
TJ = 100 °C
100
Junction to Ambient
10
Junction to Mount
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 26-May-2020
Document Number: 87686
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V35PW15
www.vishay.com
Vishay General Semiconductor
Thermal Resistance (°C/W)
80
Epoxy printed circuit
board FR4 copper
thickness = 70 μm
70
60
50
40
30
20
10
S (cm2)
0
0
1
2
3
4
5
6
7
8
9
10
Copper Pad Areas (cm2)
Fig. 7 - Typical Resistance Junction to Ambient vs. Copper Pad Areas
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SlimDPAK (TO-252AE)
0.055 (1.40)
0.047 (1.20)
0.249 (6.32)
0.239 (6.08)
0.016 (0.41)
0.010 (0.25)
0.028 (0.70)
0.012 (0.30)
0.265 (6.72)
0.255 (6.48)
0.370 (9.40)
0.339 (8.60)
0.008
0.000
0.055
0.039
0.090
NOM.
(2.29)
(0.20)
(0.00)
(1.40)
(1.00)
0.180
NOM.
(4.57)
Mounting Pad Layout
0.240
MIN.
(6.10)
0.224 (5.70)
0.209 (5.30)
0.205
NOM.
(5.20)
0.235
MIN.
(5.97)
0.386
REF.
(9.80)
0.075
MIN.
(1.90)
0.035 (0.90)
0.028 (0.70)
0.090
NOM.
(2.29)
0.055
MIN.
(1.40)
Revision: 26-May-2020
Document Number: 87686
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 09-Jul-2021
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Document Number: 91000