V3FM10-M3/H

V3FM10 www.vishay.com Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifiers FEATURES eSMP® Series • Trench MOS Schottky technology Available • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses Top view • Meets MSL level 1, per LF maximum peak of 260 °C Bottom view • Wave and reflow solderable SMF (DO-219AB) Cathode J-STD-020, • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Anode • Compatible to SOD-123W package case outline • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling, DC/DC converters, and polarity protection in commercial, industrial, and automotive applications. PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 100 V IFSM 55 A VF at IF = 3 A (TA = 125 °C) 0.62 V TJ max. 175 °C Package SMF (DO-219AB) Circuit configuration Single MECHANICAL DATA Case: SMF (DO-219AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meet JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage V3FM10 3MB VRRM 100 (1) 2.5 IF(AV) (2) 3.0 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 55 Operating junction temperature range TJ (3) -40 to +175 Storage temperature range TSTG -55 to +175 Maximum average forward rectified current (fig.1) UNIT IF(AV) V A A °C Notes (1) Free air, mounted on FR4 PCB, 2 oz. standard footprint (2) Mounted on FR4 PCB, 2 oz. 10 mm x 10 mm copper pad areas (3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J θJA Revision: 13-May-2020 Document Number: 87566 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V3FM10 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1.5 A Instantaneous forward voltage TYP. MAX. 0.59 - 0.74 0.83 0.52 - 0.62 0.70 TA = 25 °C 0.7 - TA = 125 °C 500 - - 85 900 3000 240 - TA = 25 °C IF = 3.0 A VF (1) IF = 1.5 A TA = 125 °C IF = 3.0 A VR = 70 V Reverse current IR (2) TA = 25 °C VR = 100 V Typical junction capacitance SYMBOL TA = 125 °C 4.0 V, 1 MHz CJ UNIT V μA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 5 ms THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted) PARAMETER SYMBOL RθJA Typical thermal resistance V3FM10 (1)(2) UNIT 125 RθJM (3) °C/W 22 Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT