V3FM12HM3/H

V3FM12 www.vishay.com Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifiers FEATURES eSMP® Series • Trench MOS Schottky technology Available • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses Top view • Meets MSL level 1, per LF maximum peak of 260 °C Bottom view • Wave and reflow solderable SMF (DO-219AB) Cathode J-STD-020, • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Anode • Compatible to SOD-123W package case outline • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling, DC/DC converters, and polarity protection in commercial, industrial, and automotive applications. PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 120 V IFSM 60 A VF at IF = 3 A (TA = 125 °C) 0.64 V TJ max. 175 °C Package SMF (DO-219AB) Circuit configuration Single MECHANICAL DATA Case: SMF (DO-219AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meet JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage V3FM12 VRRM 120 IF(AV) (1) 2.5 IF(AV) (2) 3.0 IFSM 60 Operating junction temperature range TJ (3) -40 to +175 Storage temperature range TSTG -55 to +175 Maximum average forward rectified current (fig.1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load UNIT 3MS V A A °C Notes (1) Free air, mounted on FR4 PCB, 2 oz. standard footprint (2) Mounted on FR4 PCB, 2 oz.10 mm x 10 mm copper pad area (3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J θJA Revision: 13-May-2020 Document Number: 87570 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V3FM12 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1.5 A Instantaneous forward voltage TYP. MAX. 0.65 - 0.84 0.94 0.55 - 0.64 0.72 TA = 25 °C 0.7 - TA = 125 °C 550 - - 100 950 3000 220 - TA = 25 °C IF = 3.0 A VF (1) IF = 1.5 A TA = 125 °C IF = 3.0 A VR = 90 V Reverse current IR (2) TA = 25 °C VR = 120 V Typical junction capacitance SYMBOL TA = 125 °C 4.0 V, 1 MHz CJ UNIT V μA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 5 ms THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted) PARAMETER SYMBOL RθJA Typical thermal resistance V3FM12 (1)(2) UNIT 125 RθJM (3) °C/W 22 Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT