V3PM12HM3/I

V3PM12 www.vishay.com Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier FEATURES eSMP ® Series • Low profile package Available • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 SMP (DO-220AA) Cathode Anode LINKS TO ADDITIONAL RESOURCES 3D 3D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. 3D Models PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 3.0 A VRRM 120 V IFSM 80 A VF at IF = 3.0 A 0.61 V TJ max. 175 °C Package SMP (DO-220AA) Circuit configuration Single Case: SMP (DO-220AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage V3PM12 UNIT 3MS VRRM (1) 120 V 3 A IF(AV) (2) 1.9 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 80 A Operating junction and storage temperature range TJ (3) -40 to +175 °C Operating junction and storage temperature range TSTG -55 to +175 °C Maximum DC forward current IF(AV) Notes (1) Mounted on 10 mm x 10 mm copper pad area PCB (2) Free air, mounted on recommended copper pad area (3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J θJA Revision: 08-Mar-2022 Document Number: 87468 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V3PM12 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1.5 A IF = 3.0 A Instantaneous forward voltage IF = 1.5 A IF = 3.0 A VR = 90 V Reverse current VR = 120 V Typical junction capacitance SYMBOL TA = 25 °C VF (1) TA = 125 °C TYP. MAX. 0.62 - 0.75 0.83 0.52 - 0.61 0.69 TA = 25 °C 0.001 - TA = 125 °C 0.6 - - 0.3 1.0 3.0 290 - TA = 25 °C IR (2) TA = 125 °C 4.0 V, 1 MHz CJ UNIT V mA mA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width ≤ 5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER Typical thermal resistance SYMBOL V3PM12 RθJA (1) 125 RθJM (2) 15 UNIT °C/W Notes (1) Free air, mounted on recommended PCB, 1 oz. pad area; thermal resistance R θJA - junction-to-ambient (2) Units mounted on PCB with specific copper pad areas; R θJM - junction-to-mount ORDERING INFORMATION (Example) PREFERRED P/N V3PM12-M3/H V3PM12-M3/I V3PM12HM3/H (1) V3PM12HM3/I (1) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.024 H 3000 7" diameter plastic tape and reel 0.024 I 10 000 13" diameter plastic tape and reel 0.024 H 3000 7" diameter plastic tape and reel 0.024 I 10 000 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 08-Mar-2022 Document Number: 87468 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V3PM12 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title Axis Title 2 1.5 100 1 0.5 TM measured at cathode terminal mount typical values 0 0 25 50 75 100 150 1 1000 0.1 0.01 TJ = 125 °C 100 0.001 TJ = 25 °C 0.0001 TJ = -40 °C 10 20 175 40 60 100 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Axis Title Axis Title 1000 10000 10000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.8 2.2 D = 0.3 1.6 1000 D = 0.2 D = 1.0 1st line 2nd line 1.4 1.2 D = 0.1 1.0 0.8 100 T 0.6 0.4 0.2 D = tp/T 10 0.5 1.0 1.5 2.0 2.5 100 100 tp 0 0 1000 1st line 2nd line 1.8 2nd line Junction Capacitance (pF) D = 0.5 2.0 2nd line Average Power Loss (W) 80 Mount Temperature (°C) 2.4 3.0 10 3.5 0.1 1 10 100 10 1000 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance Axis Title Axis Title TJ = 150 °C 1000 TJ = 100 °C TJ = 125 °C 1 100 TJ = 25 °C TJ = -40 °C 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2nd line Transient Thermal Impedance (°C/W) TJ = 175 °C 10000 1000 10000 Junction to ambient 100 1000 10 100 1st line 2nd line 10 2nd line Instantaneous Forward Current (A) TJ = 175 °C TJ = 150 °C TJ = 100 °C 0.00001 10 125 10 1st line 2nd line 1000 RthJA = 125 °C/W 2nd line Instantaneous Reverse Current (mA) 2.5 1st line 2nd line 2nd line Average Forward Rectified Current (A) RthJM = 15 °C/W 3 10000 100 10000 3.5 1 0.01 10 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 08-Mar-2022 Document Number: 87468 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V3PM12 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMP (DO-220AA) 0.012 (0.30) REF. Cathode Band 0.053 (1.35) 0.041 (1.05) 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.036 (0.91) 0.024 (0.61) 0.103 (2.60) 0.087 (2.20) 0.032 (0.80) 0.016 (0.40) 0.158 (4.00) 0.146 (3.70) Mounting pad layout 0.105 (2.67) 0.013 (0.35) 0.004 (0.10) 0.025 0.030 (0.635) (0.762) 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.018 (0.45) 0.000 (0.00) 0.006 (0.15) 0.100 (2.54) 0.050 (1.27) Revision: 08-Mar-2022 Document Number: 87468 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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