V40120C-E3/4W

V40120C, VI40120C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A FEATURES TMBS ® TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses K • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 3 1 1 V40120C 2 3 TYPICAL APPLICATIONS VI40120C PIN 1 PIN 2 PIN 1 PIN 2 PIN 3 CASE PIN 3 K For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade 2 x 20 A VRRM 120 V IFSM 250 A VF at IF = 20 A 0.63 V TJ max. 150 °C Package TO-220AB, TO-262AA Diode variation Common cathode Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker testt per Polarity: as marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Max. repetitive peak reverse voltage Max. average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Voltage rate of change (rated VR) Operating junction and storage temperature range VRRM per device per diode IF(AV) IFSM V40120C VI40120C 120 40 20 UNIT V A 250 A dV/dt 10 000 V/μs TJ, TSTG -40 to +150 °C Revision: 09-Nov-17 Document Number: 89163 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V40120C, VI40120C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 10 A Instantaneous forward voltage per diode TA = 25 °C IF = 20 A VF (1) IF = 5 A IF = 10 A TA = 125 °C IF = 20 A VR = 90 V Reverse current per diode VR = 120 V TYP. MAX. 0.50 - 0.60 - 0.78 0.88 0.43 - 0.53 - 0.63 0.71 UNIT V TA = 25 °C 19 - μA TA = 125 °C 10 - mA - 500 μA 22 45 mA V40120C VI40120C UNIT TA = 25 °C IR (2) TA = 125 °C Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance per diode RJC 1.8 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V40120C-M3/4W 1.88 4W 50/tube Tube TO-262AA VI40120C-M3/4W 1.45 4W 50/tube Tube Revision: 09-Nov-17 Document Number: 89163 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V40120C, VI40120C www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Resistive or Inductive Load Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) 50 40 30 20 10 Mounted on Specific Heatsink TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C 0.1 TA = 25 °C 0.01 0.001 0 0 25 50 75 100 125 150 175 10 20 30 40 50 60 70 80 90 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode 18 D = 0.5 16 D = 0.8 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 14 Junction Capacitance (pF) Average Power Loss (W) D = 0.3 D = 0.2 12 10 D = 1.0 D = 0.1 8 T 6 4 2 D = tp/T tp 16 20 1000 0 0 8 4 12 24 100 0.1 Average Forward Current (A) 1 10 100 Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TA = 150 °C 10 TA = 100 °C TA = 125 °C 1 TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Junction to Case 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 09-Nov-17 Document Number: 89163 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V40120C, VI40120C www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) TO-262AA 0.411 (10.45) 0.380 (9.65) 0.950 (24.13) 0.920 (23.37) 1 PIN 2 3 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.401 (10.19) 0.381 (9.68) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.35) Revision: 09-Nov-17 Document Number: 89163 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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