V40150C-E3, VF40150C-E3, VB40150C-E3, VI40150C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5 A
FEATURES
TMBS ®
TO-220AB
• Trench MOS Schottky technology
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
3
V40150C
2
1
1
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB
and TO-262AA package)
3
VF40150C
PIN 1
PIN 2
PIN 1
PIN 3
CASE
PIN 3
TO-263AB
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PIN 2
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
TO-262AA
K
K
MECHANICAL DATA
2
1
1
PIN 1
K
HEATSINK
PIN 1
PIN 2
PIN 3
K
ITO-220AB,
TO-263AB
and
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
VI40150C
VB40150C
PIN 2
2
Case:
TO-220AB,
TO-262AA
3
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
PRIMARY CHARACTERISTICS
per
Polarity: As marked
IF(AV)
2 x 20 A
VRRM
150 V
IFSM
160 A
VF at IF = 20 A
0.75 V
TJ max.
150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations
Common cathode
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage
V40150C
VF40150C
VB40150C
VI40150C
UNIT
VRRM
150
per device
IF(AV)
40
per diode
IF(AV)
20
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
160
A
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
EAS
150
mJ
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
IRRM
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
VAC
1500
V
TJ, TSTG
-55 to +150
°C
Max. average forward rectified current
(fig. 1)
Isolation voltage (ITO-220AB only) from terminal to heatsink
t = 1 min
Operating junction and storage temperature range
V
A
Revision: 08-Mar-18
Document Number: 89048
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40150C-E3, VF40150C-E3, VB40150C-E3, VI40150C-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Breakdown voltage
IR = 1.0 mA
SYMBOL
TYP
MAX.
UNIT
VBR
150 (min.)
-
V
TA = 25 °C
IF = 5 A
IF = 10 A
Instantaneous forward voltage per diode (1)
TA = 25 °C
IF = 20 A
VF
IF = 5 A
IF = 10 A
TA = 125 °C
Reverse current per diode (2)
VR = 150 V
-
1.15
1.43
0.55
-
V
0.64
-
0.75
0.82
TA = 25 °C
2
-
μA
TA = 125 °C
2.5
-
mA
-
250
μA
5
25
mA
IF = 20 A
VR = 100 V
0.69
0.84
IR
TA = 25 °C
TA = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40150C
VF40150C
VB40150C
VI40150C
UNIT
RJC
1.8
4
1.8
1.8
°C/W
Typical thermal resistance per diode
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
TO-220AB
V40150C-E3/4W
PREFERRED P/N
1.89
4W
50/tube
DELIVERY MODE
Tube
ITO-220AB
VF40150C-E3/4W
1.75
4W
50/tube
Tube
TO-263AB
VB40150C-E3/4W
1.39
4W
50/tube
Tube
TO-263AB
VB40150C-E3/8W
1.39
8W
800/reel
Tape and reel
TO-262AA
VI40150C-E3/4W
1.46
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
20
Resistive or Inductive Load
D = 0.8
D = 0.5
18
V(B,I)40150C
40
Average Power Loss (W)
Average Forward Rectified Current (A)
50
30
VF40150C
20
10
D = 0.3
16
D = 0.2
14
12
D = 1.0
10
D = 0.1
8
T
6
4
2
D = tp/T
Mounted on Specific Heatsink
tp
0
0
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
14
16
18
20
22
24
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 08-Mar-18
Document Number: 89048
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40150C-E3, VF40150C-E3, VB40150C-E3, VI40150C-E3
www.vishay.com
Vishay General Semiconductor
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Junction to Case
1
V(B,I)40150C
0.1
0.01
1.6
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
10
10
TA = 150 °C
1
TA = 125 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
0.0001
10
20
30
40
50
60
70
80
90
100
Junction to Case
1
VF40150C
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 7 - Typical Transient Thermal Impedance Per Diode
Junction Capacitance (pF)
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Revision: 08-Mar-18
Document Number: 89048
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40150C-E3, VF40150C-E3, VB40150C-E3, VI40150C-E3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.161 (4.08)
0.139 (3.53)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.603 (15.32)
0.573 (14.55)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 08-Mar-18
Document Number: 89048
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40150C-E3, VF40150C-E3, VB40150C-E3, VI40150C-E3
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.950 (24.13)
0.920 (23.37)
1
PIN
2 3
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
TO-263AB
0.41
1 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591(15.00)
0.055 (1.40)
0.045 (1.14)
0.42
MIN.
(10.66)
0.33
(8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0 to 0.01 (0 to 0.254)
0.037 (0.940)
0.027 (0.686)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
Mounting Pad Layout
0.670 (17.02)
0.591 (15.00)
0.15
(3.81) MIN.
0.08
MIN.
(2.032)
0.105 (2.67)
(0.095) (2.41)
Revision: 08-Mar-18
Document Number: 89048
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
