V40D45C-M3/I

V40D45C www.vishay.com Vishay General Semiconductor Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.29 V at IF = 5.0 A FEATURES eSMP® Series SMPD (TO-263AC) • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement K • Low forward voltage drop, low power losses • High efficiency operation 1 • Meets MSL level 1, per LF maximum peak of 260 °C 2 Top View Bottom View J-STD-020, • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode 1 K Anode 2 Cathode TYPICAL APPLICATIONS DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models PRIMARY CHARACTERISTICS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and automotive application. MECHANICAL DATA IF(AV) 2 x 20 A VRRM 45 V IFSM 250 A VF at IF = 20 A (TA = 125 °C) 0.40 V TJ max. 150 °C Package SMPD (TO-263AC) Circuit configuration Common cathode Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meet JESD 201 class 2 whisker test Polarity: as marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code UNIT V40D45C Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) V40D45C VRRM per device per diode IF(AV) (1) 45 V 40 A 20 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 250 Operating junction temperature range TJ (2) -40 to +150 Storage temperature range TSTG -55 to +150 A °C Notes (1) Mounted on infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA Revision: 18-Mar-2019 Document Number: 87552 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V40D45C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. 0.41 - IF = 5 A IF = 10 A TA = 25 °C IF = 20 A Instantaneous forward voltage per diode VF (1) IF = 5 A TA = 125 °C IF = 10 A IF = 20 A TA = 25 °C VR = 45 V Reverse current per diode Typical junction capacitance 4.0 V, 1 MHz CJ - 0.49 0.57 0.29 - 0.33 - 0.4 0.48 - 2.5 19 60 4500 - IR (2) TA = 125 °C 0.44 UNIT V mA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL RJC Typical thermal resistance per device V40D45C (1) UNIT 0.8 RJA (2)(3) °C/W 45 Notes (1) Mounted on infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (3) Free air, without heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.55 I 2000/reel 13" diameter plastic tape and reel 0.55 I 2000/reel 13" diameter plastic tape and reel V40D45C-M3/I V40D45CHM3/I (1) Note (1) AEC-Q101 qualified 12.0 45 RthJC = 0.8 ƱC/W 40 Average Power Loss (W) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 35 30 25 20 15 RthJA = 45 ƱC/W 10 D = 0.8 10.0 D = 0.5 8.0 D = 0.3 D = 1.0 6.0 D = 0.2 4.0 T D = 0.1 2.0 5 D = tp/T 0 tp 0.0 0 25 50 75 100 125 150 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve 0 2.5 5 7.5 10 12.5 15 17.5 20 22.5 Average Forward Current (A) Fig. 2 - Average Power Loss Characteristics Revision: 18-Mar-2019 Document Number: 87552 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V40D45C www.vishay.com Vishay General Semiconductor Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TJ = 150 °C TJ = 125 °C 10 TJ = 100 °C 1 TJ = 25 °C 0.1 TJ = -40 °C 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 100 Junction to ambient 10 1 0.1 0.01 0.1 Instantaneous Forward Voltage (V) 100 Fig. 6 - Typical Transient Thermal Impedance 50 TJ = 150 °C 10 Thermal Resistance (°C/W) Instantaneous Reverse Current (mA) 10 t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics 100 1 TJ = 125 °C TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 0.001 Epoxy printed circuit board FR4 copper thickness = 70 μm 45 40 35 30 25 S (cm2) TJ = -40 °C 0.0001 20 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics 1 2 3 4 5 6 7 Copper Pad Areas (cm2) 8 9 Fig. 7 - Thermal Resistance Junction-to-Ambient vs. Copper Pad Areas Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Revision: 18-Mar-2019 Document Number: 87552 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V40D45C www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMPD (TO-263AC)    5()            WR   WR             120     Mounting Pad Layout 0,1       5()   120   5() 0,1     Revision: 18-Mar-2019 Document Number: 87552 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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