V40DM153C
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.52 V at IF = 5.0 A
FEATURES
eSMP® Series
SMPD (TO-263AC)
• Trench MOS Schottky technology
Available
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
K
• Low forward voltage drop, low power losses
• High efficiency operation
1
• Meets MSL level 1, per
LF maximum peak of 260 °C
2
Top View
Bottom View
• AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Anode 1
K
Anode 2
Cathode
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV)
J-STD-020,
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection in commercial, industrial, and
automotive application.
MECHANICAL DATA
2 x 20 A
VRRM
150 V
IFSM
160 A
VF at IF = 20 A (TJ = 125 °C)
0.69 V
TJ max.
175 °C
Package
SMPD (TO-263AC)
Circuit configuration
Common cathode
Case: SMPD (TO-263AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meet JESD 201 class 2 whisker test
Polarity: as marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
UNIT
V40DM153C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
V40DM153C
VRRM
per device
per diode
IF(AV) (1)
150
V
40
A
20
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
160
Operating junction temperature range
TJ (2)
-40 to +175
Storage temperature range
TSTG
-55 to +175
A
°C
Notes
(1) Mounted on infinite heatsink
(2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
θJA
Revision: 21-Oct-2020
Document Number: 87189
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40DM153C
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 10 A
Instantaneous forward voltage per diode
TJ = 25 °C
IF = 20 A
VF (1)
IF = 5 A
TJ = 125 °C
IF = 10 A
IF = 20 A
TJ = 25 °C
VR = 100 V
TJ = 125 °C
Reverse current at rated VR per diode
TJ = 25 °C
VR = 150 V
Typical junction capacitance
IR (2)
TYP.
MAX.
0.64
-
0.76
-
0.94
1.12
0.52
-
0.60
-
0.69
0.74
0.001
-
1.5
-
-
0.15
4
12
800
-
TJ = 125 °C
4.0 V, 1 MHz
CJ
UNIT
V
mA
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 5 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per device
SYMBOL
V40DM153C
RθJC(1)
1.6
RθJA (2)(3)
58
UNIT
°C/W
Notes
(1) Mounted on infinite heatsink
(2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
θJA - junction-to-ambient
(3) Free air, without heatsink
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
V40DM153C-M3/I
0.55
I
2000/reel
13" diameter plastic tape and reel
V40DM153CHM3/I (1)
0.55
I
2000/reel
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
Revision: 21-Oct-2020
Document Number: 87189
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40DM153C
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
Axis Title
10000
TM measured at cathode
terminal mount typical values
1000
30
25
20
100
15
10
RthJA = 58 °C/W
5
10
0
0
25
50
75
100
125
150
10
1
0.1
TJ = 125 °C
0.01
TJ = 25 °C
0.001
100
0.0001
TJ = -40 °C
0.00001
10
0.000001
10
175
20
30
40
50
60
70
80
90
100
Mount Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
Axis Title
Axis Title
18.0
10000
D = 0.8
16.0
10000
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10.0
D = 1.0
1000
D = 0.2
8.0
D = 0.1
6.0
100
T
4.0
1000
1000
100
100
1st line
2nd line
D = 0.3
12.0
2nd line
Junction Capacitance (pF)
D = 0.5
14.0
1st line
2nd line
2nd line
Average Power Loss (W)
1000
TJ = 175 °C
TJ = 150 °C
TJ = 100 °C
1st line
2nd line
40
2nd line
Instantaneous Reverse Current (mA)
RthJM = 1.6 °C/W
35
10000
100
1st line
2nd line
2nd line
Average Forward Rectified Current (A)
45
2.0
D = tp/T
tp
10
0
0
2
4
6
10
0.1
8 10 12 14 16 18 20 22 24
1
10
10
1000
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Average Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
Axis Title
Axis Title
10000
TJ = 150 °C
10
1000
TJ = 125 °C
TJ = 100 °C
100
1
TJ = 25 °C
TJ = -40 °C
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10000
Junction to ambient
1000
1st line
2nd line
TJ = 175 °C
100
2nd line
Transient Thermal Impedance (°C/W)
100
2nd line
Instantaneous Forward Current (A)
100
10
100
1
0.01
10
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 21-Oct-2020
Document Number: 87189
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40DM153C
www.vishay.com
Vishay General Semiconductor
Axis Title
10000
100
Epoxy printed circuit
board FR4 copper
thickness = 70 µm
2nd line
Thermal Resistance (°C/W)
80
1000
1st line
2nd line
60
40
100
S (cm2)
20
10
0
1
2
3
4
5
6
7
8
9
10
Copper Pad Areas (cm2)
Fig. 7 - Thermal Resistance Junction-to-Ambient vs. Copper Pad Areas
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPD (TO-263AC)
0.402 (10.20)
0.386 (9.80)
0.059 (1.50) REF.
0.071 (1.80)
0.063 (1.60)
0.020 (0.52)
0.011 (0.27)
0.048 (1.21)
0.032 (0.81)
0.354 (8.99)
0.338 (8.59)
0.509 (12.93)
0.485 (12.33)
0 to 0.01
(0 to 0.254)
0.069 (1.74)
0.053 (1.34)
0.020 (0.52)
0.011 (0.27)
0.052 (1.23)
0.028 (0.72)
0.063 (1.60)
0.047 (1.20)
0.200
NOM.
(5.08)
Mounting Pad Layout
0.420 (10.66) MIN.
0.339 (8.60)
0.323 (8.20)
0.276 (7.00)
0.260 (6.60)
0.330
REF.
(8.38)
0.194
NOM.
(4.93)
0.604 (15.33)
0.525 (13.33)
0.120 (3.05) REF.
0.080 (2.03) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 21-Oct-2020
Document Number: 87189
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 01-Jan-2023
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Document Number: 91000