V4PAN50-M3/I

V4PAN50-M3 www.vishay.com Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier FEATURES eSMP® Series K • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency A • Low forward voltage drop Top View Bottom View SMPA (DO-221BC) Anode Cathode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 4.0 A VRRM 50 V IFSM 80 A VF at IF = 4.0 A (TA = 125 °C) 0.46 V TJ max. 150 °C Package SMPA (DO-221BC) Circuit configuration Single Case: SMPA (DO-221BC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD22-B102 M3 suffix meets JESD 201 class 2 whisker test per Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage V4PAN50 UNIT 4N5 VRRM 50 IF (1) 4.0 IF (2) 3.0 Maximum DC reverse voltage VDC 35 V Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 80 A TJ, TSTG -40 to +150 °C Maximum DC forward current Operating junction and storage temperature range V A Notes (1) Units mounted on 15 mm x 15 mm pad areas, 2 oz. PCB (2) Free air, mounted on recommended copper pad area Revision: 02-Nov-2020 Document Number: 87910 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V4PAN50-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 2.0 A TA = 25 °C IF = 4.0 A Instantaneous forward voltage VF (1) IF = 2.0 A TA = 125 °C IF = 4.0 A TYP. MAX. 0.43 - 0.51 0.59 0.34 - 0.46 0.54 8 - μA 8.8 - mA - 600 μA 12 35 mA 480 - pF TA = 25 °C VR = 35 V TA = 125 °C Reverse current TA = 25 °C VR = 50 V Typical junction capacitance SYMBOL IR (2) TA = 125 °C 4.0 V, 1 MHz CJ UNIT V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL V4PAN50 RθJA (1) 100 RθJM (1) 9 Typical thermal resistance UNIT °C/W Note Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance RθJA - junction to ambient; RθJM - junction to mount (1) ORDERING INFORMATION (Example) PREFERRED P/N V4PAN50-M3/I UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.032 I 14 000 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified) Axis Title Axis Title 3.5 RthJA = 100 °C/W 3 1000 2.5 2 100 1.5 1 TM measured at cathode terminal mount typical values 0.5 10 0 0 25 50 75 100 125 150 2nd line Average Power Loss (W) 4 1st line 2nd line 2nd line Average Forward Rectified Current (A) RthJM = 9.0 °C/W 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10000 D = 0.8 D = 0.5 D = 0.3 D = 0.2 1000 D = 1.0 1st line 2nd line 10000 4.5 D = 0.1 100 T D = tp/T tp 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 02-Nov-2020 Document Number: 87910 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V4PAN50-M3 www.vishay.com Vishay General Semiconductor Axis Title Axis Title 10000 TJ = 125 °C 1 100 TJ = 100 °C TJ = 25 °C TJ = -40 °C 10 0.1 0 0.2 0.4 0.6 0.8 1.0 Junction to ambient 100 1000 10 100 1st line 2nd line 1000 2nd line Transient Thermal Impedance (°C/W) TJ = 150 °C 10 10000 1000 1st line 2nd line 2nd line Instantaneous Forward Current (A) 100 10 1 0.01 1.2 0.1 1 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Axis Title Axis Title 110 10000 100 Epoxy printed circuit board FR4 copper thickness = 70 µm 100 TJ = 150 °C TJ = 125 °C TJ = 100 °C 1000 0.1 0.01 TJ = 25 °C 100 0.001 0.0001 TJ = -40 °C 10 20 30 40 50 60 80 1000 70 60 50 40 100 30 20 S (cm2) 10 0.00001 10 90 1st line 2nd line 1 2nd line Thermal Resistance (°C/W) 10 1st line 2nd line 2nd line Instantaneous Reverse Current (mA) 10 70 80 10 0 0 90 100 1 2 3 4 5 6 7 8 9 Percent of Rated Peak Reverse Voltage (%) Copper Pad Areas (cm2) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 7 - Thermal Resistance Junction to Ambient vs. Copper Pad Areas Axis Title 1000 10000 1000 1st line 2nd line 2nd line Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 100 10 10 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Revision: 02-Nov-2020 Document Number: 87910 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V4PAN50-M3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMPA (DO-221BC) 0.059 (1.50) 0.030 (0.75) 0.122 (3.10) 0.098 (2.50) Cathode Band 0.057 (1.45) 0.049 (1.25) 0.106 (2.70) 0.098 (2.50) 0.171 (4.35) 0.163 (4.15) 0.211 (5.35) 0.199 (5.05) 0.087 (2.20) 0.063 (1.6) 0.059 (1.50) 0.030 (0.75) Typ.: 0.019 (0.48) Mounting Pad Layout MAX. 0.037 (0.92) 0.039 (1.00) 0.035 (0.90) 0.012 (0.30) 0.006 (0.15) 0.087 (2.20) MIN. 0.060 (1.52) MIN. MIN. 0.122 (3.10) MIN. 0.059 (1.50) 0.217 (5.52) Revision: 02-Nov-2020 Document Number: 87910 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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