V60120C-M3/4W

V60120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A FEATURES TMBS ® • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 2 3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 V60120C PIN 1 PIN 2 PIN 3 CASE TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 120 V Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade IFSM 300 A VF at IF = 30 A 0.71 V TJ max. 150 °C Package TO-220AB Diode variation Common cathode Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Voltage rate of change (rated VR) Operating junction and storage temperature range SYMBOL V60120C UNIT VRRM 120 V IF(AV) 60 30 A 300 A dV/dt 10 000 V/μs TJ, TSTG -40 to +150 °C IFSM Revision: 09-Nov-17 Document Number: 89251 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V60120C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. 0.48 - IF = 5 A IF = 15 A Instantaneous forward voltage per diode TA = 25 °C IF = 30 A VF (1) IF = 5 A IF = 15 A TA = 125 °C IF = 30 A VR = 90 V Reverse current at rated VR per diode VR = 120 V 0.66 - 0.88 0.95 0.41 - 0.58 - UNIT V 0.71 0.75 TA = 25 °C 14 - μA TA = 125 °C 11 - mA 40 500 μA 15 45 mA IR (2) TA = 25 °C TA = 125 °C Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V60120C UNIT RJC 1.2 °C/W Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.89 4W 50/tube Tube V60120C-M3/4W RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 30 70 D = 0.8 D = 0.5 60 25 Average Power Loss (W) Average Forward Current (A) Resistive or Inductive Load 50 40 30 20 D = 0.3 20 D = 0.2 D = 1.0 D = 0.1 15 T 10 5 10 D = tp/T 0 tp 0 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 09-Nov-17 Document Number: 89251 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V60120C www.vishay.com Vishay General Semiconductor 10 000 300 250 200 150 100 1000 50 0 100 1 10 100 0.1 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 6 - Typical Junction Capacitance Per Diode 10 Transient Thermal Impedance (°C/W) 100 Instantaneous Forward Current (A) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TJ = TJ max. 8.3 ms Single Half Sine-Wave Junction Capacitance (pF) Peak Forward Surge Current (A) 350 TA = 150 °C TA = 125 °C 10 TA = 25 °C 1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Junction to Case 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 4 - Typical Instantaneous Forward Characteristics Per Diode Fig. 7 - Typical Transient Thermal Impedance Per Diode Instantaneous Reverse Current (mA) 100 TA = 150 °C 10 TA = 125 °C 1 0.1 TA = 25 °C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Reverse Characteristics Per Diode Revision: 09-Nov-17 Document Number: 89251 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V60120C www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 09-Nov-17 Document Number: 89251 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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