V8KM60DUHM3/H

V8KM60DU www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 2 A FEATURES 1 • Trench MOS Schottky technology 2 • Low forward voltage drop, low power losses 3 4 8 • High efficiency operation • Meets MSL level 1, per LF maximum peak of 260 °C 7 6 Available J-STD-020, • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 5 FlatPAK 5 x 6 1 and / or 2 7, 8 3 and / or 4 5, 6 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 2x4A VRRM 60 V IFSM 80 A VF at IF = 4 A (TA = 125 °C) 0.50 V TJ max. 175 °C Package FlatPAK 5 x 6 Circuit configuration Separated cathode MECHANICAL DATA Case: FlatPAK 5 x 6 Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test  MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current per device Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range V8KM60DU UNIT V8M60D VRRM 60 V IF(AV) (1) 8 A IF(AV) (2) 4.2 A IFSM 80 A TJ (3), TSTG -40 to +175 °C Notes (1) With infinite heatsink (2) Free air, mounted on recommended pad area (3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J TJA Revision: 18-Apr-18 Document Number: 87536 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V8KM60DU www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 2 A Instantaneous forward voltage per diode IF = 4 A IF = 2 A IF = 4 A Reverse current per diode VR = 60 V Typical junction capacitance per diode 4.0 V, 1 MHz SYMBOL TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TA = 125 °C IR (2) CJ TYP. MAX. 0.51 - 0.56 0.64 0.41 - 0.50 0.58 - 0.3 1.5 6 500 - UNIT V mA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width d 5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per device SYMBOL V8KM60DU RTJA (1)(2) 80 RTJM (3) 3.2 UNIT °C/W Notes (1) The heat generated must be less than thermal conductivity from junction-to-ambient: dP /dT < 1/R D J TJA (2) Free air, mounted on recommended copper pad area; thermal resistance R TJA - junction-to-ambient (3) Mounted on infinite heat sink; thermal resistance R TJM - junction-to-mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V8KM60DU-M3/H 0.10 H 1500 7" diameter plastic tape and reel V8KM60DU-M3/I 0.10 I 6000 13" diameter plastic tape and reel V8KM60DUHM3/H (1) 0.10 H 1500 7" diameter plastic tape and reel V8KM60DUHM3/I (1) 0.10 I 6000 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) Revision: 18-Apr-18 Document Number: 87536 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V8KM60DU www.vishay.com Vishay General Semiconductor 9.0 Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) RthJM = 3.2 °C/W 8.0 7.0 6.0 5.0 RthJA = 80 ƱC/W 4.0 3.0 2.0 1.0 TM measured at cathode terminal mount typical values 0 0 25 50 75 100 125 150 100 TJ = 150 °C 10 TJ = 175 °C 1 0.1 TJ = 125 °C TJ = 100 °C 0.01 TJ = 25 °C 0.001 0.0001 0.00001 TJ = -40 °C 0.000001 175 10 Mount Temperature (°C) 20 30 40 50 60 Fig. 1 - Maximum Forward Current Derating Curve 90 100 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 2.5 D = 0.5 2.0 D = 0.3 D = 1.0 D = 0.2 1.5 D = 0.1 1.0 T 0.5 D = tp/T Junction Capacitance (pF) D = 0.8 Average Power Loss (W) 80 Fig. 4 - Typical Reverse Leakage Characteristics 3.0 1000 100 10 tp 1 0.0 0 0.5 1 1.5 2 2.5 3 3.5 4 0.1 4.5 1 Average Forward Current (A) TJ = 175 °C 10 TJ = 150 °C TJ = 125 °C 1 TJ = 100 °C TJ = 25 °C TJ = -40 °C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics 100 Fig. 5 - Typical Junction Capacitance Transient Thermal Impedance (°C/W) 100 10 Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Instantaneous Forward Current (A) 70 Percent of Rated Peak Reverse Voltage (%) 100 Junction-to-ambient 10 1 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 18-Apr-18 Document Number: 87536 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V8KM60DU www.vishay.com Vishay General Semiconductor 4 x L2 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) D D1 6 6xe E E1 8xb 5 F2 5 6 7 (d1) F1 F1 8 M E2 7 (E3) 2 x b1 8 F2 4 3 Top View 4 2 1 D3 2 x D4 4 x L1 2 (8 x a) 1 3 (K) (2 x d2) D2 Bottom View (Dual Pad) 0.180 (4.56) 0.022 (0.56) Side View 0.055 (1.40) A 0.191 (4.84) c (8 x Θ) 0.259 (6.59) 0.082 (2.08) 0.030 (0.75) 0.039 (1.00) 0.219 (5.55) DIM. A (a) b b1 c D D1 D2 D3 D4 (d1) (d2) E E1 E2 (E3) e (K) L1 L2 M 4 MIN. 0.035 0.013 0.013 0.008 0.197 0.189 0.154 0.020 0.063 0.238 0.228 0.157 0.039 0.019 0.012 0.128 0° INCHES NOM. 0.039 0.006 0.017 0.017 0.203 0.193 0.161 0.024 0.069 0.016 0.005 0.244 0.232 0.165 0.144 0.050 BSC 0.138 - 0.050 (1.27) 0.030 (0.75) PCB Footprint (Dual Pad) MAX. 0.043 0.020 0.020 0.014 0.209 0.197 0.169 0.031 0.075 0.250 0.236 0.173 - MIN. 0.89 0.32 0.32 0.20 5.00 4.80 3.90 0.50 1.60 6.05 5.80 4.00 - 0.043 0.031 0.148 10° 1.00 0.48 0.30 3.25 0° MILLIMETERS NOM. 0.99 0.15 0.43 0.43 5.15 4.90 4.10 0.60 1.75 0.40 0.125 6.20 5.90 4.20 3.65 1.27 BSC 3.50 - MAX. 1.09 0.52 0.52 0.35 5.30 5.00 4.30 0.80 1.90 6.35 6.00 4.40 1.10 0.80 3.75 10° Notes • Dimensioning and tolerancing per ASME Y14.5-2009 • Dimensions D1 and E1 do not include mold flash or gate burrs • Dimension (XX) means reference only Revision: 18-Apr-18 Document Number: 87536 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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