V8P6
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount
TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.37 V at IF = 4 A
FEATURES
eSMP® Series
• Very low profile - typical height of 1.1 mm
Available
• Ideal for automated placement
K
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
1
• High efficiency operation
2
• Meets MSL level 1, per
LF maximum peak of 260 °C
SMPC (TO-277A)
K
Anode 1
Cathode
Anode 2
J-STD-020,
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
ADDITIONAL RESOURCES
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
3D 3D
3D Models
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
8.0 A
VRRM
60 V
IFSM
140 A
VF at IF = 8.0 A (TA = 125 °C)
0.46 V
TJ max.
150 °C
Package
SMPC (TO-277A)
Circuit configuration
Single
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated VR)
Operating junction and storage temperature range
V8P6
UNIT
V86
VRRM
60
V
(1)
8.0
IF (2)
4.2
IFSM
140
A
dV/dt
10 000
V/μs
TJ, TSTG
-40 to +150
°C
IF
A
Notes
(1) Mounted on 30 mm x 30 mm pad areas aluminum PCB
(2) Free air, mounted on recommended copper pad area
Revision: 27-Nov-2019
Document Number: 87708
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V8P6
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 4.0 A
TA = 25 °C
IF = 8.0 A
Instantaneous forward voltage
VF (1)
IF = 4.0 A
TA = 125 °C
IF = 8.0 A
TA = 25 °C
VR = 60 V
Reverse current
SYMBOL
TA = 125 °C
IR (2)
TYP.
MAX.
0.46
-
0.53
0.61
0.37
-
0.46
0.55
-
0.6
7.0
25
UNIT
V
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width ≤ 5 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
RθJA
Typical thermal resistance
V8P6
(1)(2)
75
RθJM (3)
UNIT
°C/W
4
Notes
(1) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R
D
J
θJA
(2) Free air mounted on recommended copper pad area; thermal resistance R
θJA - junction to ambient
(3) Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance R
θJM - junction to mount
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
V8P6-M3/86A
0.10
86A
1500
7" diameter plastic tape and reel
V8P6-M3/87A
0.10
87A
6500
13" diameter plastic tape and reel
V8P6HM3_A/H (1)
0.10
H
1500
7" diameter plastic tape and reel
V8P6HM3_A/I (1)
0.10
I
6500
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
Revision: 27-Nov-2019
Document Number: 87708
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V8P6
www.vishay.com
Vishay General Semiconductor
9
TM = 132 °C, RθJM = 4 °C/W
8
Instantaneous Reverse Current (mA)
Average Forward Rectified Current (A)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
7
6
5
TA = 25 °C, RθJA = 75 °C/W
4
3
2
1
0
0
25
50
75
100
125
150
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
0.1
TA = 25 °C
0.01
0.001
TA = -40 °C
0.0001
10
Case Temperature (°C)
20
30
40
50
60
70
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.8
D = 0.5
4.0
Junction Capacitance (pF)
Average Power Loss (W)
100
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
5.0
D = 0.3
D = 1.0
D = 0.2
3.0
D = 0.1
2.0
T
1.0
D = tp/T
1000
tp
0.0
100
0
1
2
3
4
5
6
7
8
9
0.1
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
TA = -40 °C
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10
100
Fig. 5 - Typical Junction Capacitance
Transient Thermal Impedance (°C/W)
TA = 150 °C
1
Reverse Voltage (V)
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Instantaneous Forward Current (A)
90
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
0
80
100
Junction to Ambient
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 27-Nov-2019
Document Number: 87708
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V8P6
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPC (TO-277A)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
Conform to JEDEC® TO-277A
Revision: 27-Nov-2019
Document Number: 87708
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
1
Document Number: 91000