V8PM10S-M3/I

V8PM10S www.vishay.com Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.50 V at IF = 4 A FEATURES eSMP® Series • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement K • Trench MOS Schottky technology • Low forward voltage drop, low power losses 1 • High efficiency operation 2 • Meets MSL level 1, per LF maximum peak of 260 °C SMPC (TO-277A) K Anode 1 Cathode Anode 2 DESIGN SUPPORT TOOLS J-STD-020, • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 click logo to get started TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. Models Available PRIMARY CHARACTERISTICS IF(AV) 8A VRRM 100 V IFSM 120 A VF at IF = 8 A (125 °C) 0.62 V TJ max. 175 °C Package SMPC (TO-277A) Circuit configuration Single MECHANICAL DATA Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current Peak forward surge current 10 ms single half sine-wave  superimposed on rated load Operating junction and storage temperature range V8PM10S UNIT 8M10S VRRM 100 IF(AV) (1) 8 V IF(AV) (2) 3.5 IFSM 120 A TJ (3), TSTG -40 to +175 °C A Notes (1) Mounted on 30 mm x 30 mm pad areas aluminum PCB (2) Free air, mounted on recommended pad area (3) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R D J JA Revision: 30-Jan-2019 Document Number: 87532 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V8PM10S www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 4 A Instantaneous forward voltage IF = 8 A IF = 4 A IF = 8 A VR = 70 V Reverse current VR = 100 V Typical junction capacitance SYMBOL TA = 25 °C VF (1) TA = 125 °C TYP. MAX. 0.58 - 0.70 0.78 0.50 - 0.62 0.70 TA = 25 °C 0.01 - TA = 125 °C 2 - - 0.2 4 10 860 - IR (2) TA = 25 °C TA = 125 °C 4.0 V, 1 MHz CJ UNIT V mA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL RJA Typical thermal resistance V8PM10S (1)(2) 80 RJM (3) 4 UNIT °C/W Notes (1) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R D J JA (2) Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance R JA - junction to ambient (3) Units mounted on 30 mm x 30 mm aluminum PCB, thermal resistance R JM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE V8PM10S-M3/H 0.10 H 1500 7" diameter plastic tape and reel V8PM10S-M3/I 0.10 I 6500 13" diameter plastic tape and reel V8PM10SHM3/H (1) 0.10 H 1500 7" diameter plastic tape and reel V8PM10SHM3/I (1) 0.10 I 6500 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 30-Jan-2019 Document Number: 87532 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V8PM10S www.vishay.com Vishay General Semiconductor Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified) 9.0 TJM = 153 ƱC ,RthJM = 4 ƱC/W 8.0 7.0 6.0 5.0 4.0 TJ = 25 ƱC, RthJA = 80 ƱC/W 3.0 2.0 1.0 TM measured at cathode terminal mount typical values 0.0 0 25 50 75 100 125 150 175 100 1 0.1 0.01 TJ = 25 °C 0.001 0.0001 TJ = -40 °C 0.00001 0.000001 10 20 30 40 60 70 80 90 100 Fig. 4 - Typical Reverse Characteristics 10 000 7.0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Junction Capacitance (pF) D = 0.8 6.0 D = 0.5 5.0 D = 0.3 D = 1.0 4.0 D = 0.2 3.0 D = 0.1 2.0 T 1.0 D = tp/T tp 7 8 0.0 1000 100 10 0 1 2 3 4 5 6 0.1 9 1 Average Forward Current (A) TJ = 175 °C 10 TJ = 150 °C TJ = 125 °C TJ = 100 °C 1 TJ = 25 °C TJ = -40 °C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics 100 Fig. 5 - Typical Junction Capacitance Transient Thermal Impedance (°C/W) 100 10 Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Instantaneous Forward Current (A) 50 Percent of Rated Peak Reverse Voltage (%) Mount Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve Average Power Loss (W) TJ = 175 °C TJ = 150 °C TJ = 125 °C TJ = 100 °C 10 100 Junction to Ambient 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 30-Jan-2019 Document Number: 87532 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V8PM10S www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMPC (TO-277A) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC® TO-277A Revision: 30-Jan-2019 Document Number: 87532 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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