VB10170C
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.57 V at IF = 2.5 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
D2PAK (TO-263AB)
• Low forward voltage drop, low power losses
K
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1
VB10170C
PIN 1
Available
K
TYPICAL APPLICATIONS
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS
click logo to get started
Models
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Available
PRIMARY CHARACTERISTICS
IF(AV)
2x5A
VRRM
170 V
IFSM
80 A
VF at IF = 5.0 A
0.65 V
TJ max.
175 °C
Package
D2PAK (TO-263AB)
Circuit configuration
Common cathode
Case: D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 and M3 suffix meet JESD 201 class 2 whisker test
per
Polarity: as marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
SYMBOL
VB10170C
UNIT
VRRM
170
V
10
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated VR)
Operating junction and storage temperature range
IF(AV)
IFSM
A
5
80
A
dV/dt
10 000
V/μs
TJ, TSTG
-40 to +175
°C
Revision: 19-Jun-2018
Document Number: 89948
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB10170C
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 2.5 A
IF = 5.0 A
Instantaneous forward voltage per diode
IF = 2.5 A
IF = 5.0 A
VR = 136 V
Reverse current per diode
VR = 170 V
SYMBOL
TYP.
MAX.
UNIT
0.74
-
0.84
1.03
0.57
-
0.65
0.74
TA = 25 °C
0.3
-
μA
TA = 125 °C
0.9
-
mA
TA = 25 °C
VF (1)
TA = 125 °C
IR (2)
TA = 25 °C
TA = 125 °C
V
-
90
μA
1.3
10
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
per diode
Typical thermal resistance
VB10170C
RJC
per device
UNIT
3.0
°C/W
1.7
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
TO-263AB
VB10170C-E3/4W
PREFERRED P/N
1.38
4W
50/tube
DELIVERY MODE
Tube
TO-263AB
VB10170C-E3/8W
1.38
8W
800/reel
Tape and reel
TO-263AB
VB10170C-M3/I
1.38
I
800/reel
Tape and reel
4.4
6
5
D = 0.5 D = 0.8
4.0
RthJ-A=RthJ-C
Average Power Loss (W)
Average Forward Rectified Current (A)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
4
3
2
1
D = 0.3
D = 0.2
3.6
3.2
D = 0.1
D = 1.0
2.8
2.4
2.0
1.6
T
1.2
0.8
0.4
0
D = tp/T
tp
0.0
0
25
50
75
100
125
150
175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
0
1
2
3
4
5
6
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 19-Jun-2018
Document Number: 89948
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB10170C
www.vishay.com
Vishay General Semiconductor
10 000
TA = 175 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
TA = 25 °C
0.1
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1
10
100
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
Instantaneous Forward Voltage (V)
TA = 175 °C
10
TA = 150 °C
1
TA = 125 °C
0.1
TA = 100 °C
0.01
0.001
TA = 25 °C
0.0001
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
10
Junction to Case
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
Mounting Pad Layout
0.42 (10.66) min.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 19-Jun-2018
Document Number: 89948
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000