V20100S-M3, VF20100S-M3, VB20100S-M3, VI20100S-M3
www.vishay.com
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.446 V at IF = 5 A
FEATURES
TMBS ®
TO-220AB
• Trench MOS Schottky technology
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
3
1
1
V20100S
2
3
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
VF20100S
PIN 1
PIN 2
PIN 1
PIN 3
CASE
PIN 3
TO-263AB
PIN 2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TO-262AA
TYPICAL APPLICATIONS
K
K
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
A
NC
VB20100S
NC
K
HEATSINK
A
1
VI20100S
PIN 1
PIN 2
PIN 3
K
2
MECHANICAL DATA
3
Case:
TO-220AB,
TO-262AA
ITO-220AB,
TO-263AB
and
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
PRIMARY CHARACTERISTICS
VF at IF = 20 A
0.69 V
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
V20100S-M3 and VF20100-M3 suffix meets JESD 201
class 1A whisker test
VB20100S-M3 and VI20100-M3 suffix meets JESD 201
class 2 whisker test
TJ max.
150 °C
Polarity: as marked
Package
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variation
Single die
IF(AV)
20 A
VRRM
100 V
IFSM
250 A
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20100S
VF20100S
VB20100S
VI20100S
UNIT
Max. repetitive peak reverse voltage
VRRM
100
V
Max. average forward rectified current (fig. 1)
IF(AV)
20
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
250
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH
EAS
210
mJ
Peak repetitive reverse current
at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
IRRM
1.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
VAC
1500
V
TJ, TSTG
-40 to +150
°C
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min
Operating junction and storage temperature range
Revision: 13-Mar-18
Document Number: 87648
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V20100S-M3, VF20100S-M3, VB20100S-M3, VI20100S-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Breakdown voltage
IR = 10 mA
TA = 25 °C
SYMBOL
TYP.
MAX.
UNIT
VBR
105 (min.)
-
V
IF = 5 A
IF = 10 A
TA = 25 °C
IF = 20 A
Instantaneous forward voltage
VF (1)
IF = 5 A
TA = 125 °C
IF = 10 A
IF = 20 A
VR = 70 V
Reverse current
-
0.79
0.90
0.45
-
0.53
-
0.69
0.76
V
TA = 25 °C
17
-
μA
TA = 125 °C
7
-
mA
70
500
μA
14
30
mA
IR (2)
TA = 25 °C
VR = 100 V
0.51
0.60
TA = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20100S
VF20100S
VB20100S
VI20100S
UNIT
RJC
2.0
4.0
2.0
2.0
°C/W
Typical thermal resistance
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
V20100S-M3/4W
1.88
4W
50/tube
Tube
ITO-220AB
VF20100S-M3/4W
1.75
4W
50/tube
Tube
TO-263AB
VB20100S-M3/4W
1.37
4W
50/tube
Tube
TO-263AB
VB20100S-M3/8W
1.37
8W
800/reel
Tape and reel
TO-262AA
VI20100S-M3/4W
1.45
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
20
24
VB20100S
20
D = 0.5
18
D = 0.8
D = 0.3
V20100S
VI20100S
Average Power Loss (W)
Average Forward Current (A)
Resistive or Inductive Load
16
VF20100S
12
8
4
16
D = 0.2
14
12
D = 1.0
D = 0.1
10
8
T
6
4
2
0
D = tp/T
tp
16
20
0
0
25
50
75
100
125
150
175
0
4
8
12
24
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 13-Mar-18
Document Number: 87648
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V20100S-M3, VF20100S-M3, VB20100S-M3, VI20100S-M3
www.vishay.com
Vishay General Semiconductor
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TA = 150 °C
TA = 125 °C
10
TA = 25 °C
1
0.2
0.4
0.6
0.8
1.0
1.2
0.1
0.01
V(B,I)20100S
1.4
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
1
0.001
0.01
0.1
0
Junction to Case
TA = 150 °C
10
TA = 125 °C
1
0.1
TA = 25 °C
0.01
0.001
10
20
30
40
50
60
70
80
90
100
Junction to Case
VF20100S
1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 7 - Typical Transient Thermal Impedance
Junction Capacitance (pF)
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Revision: 13-Mar-18
Document Number: 87648
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V20100S-M3, VF20100S-M3, VB20100S-M3, VI20100S-M3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.415 (10.54) max.
0.370 (9.40)
0.360 (9.14)
TO-220AB
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
PIN
1 2 3
0.635 (16.13)
0.625 (15.87)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 13-Mar-18
Document Number: 87648
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V20100S-M3, VF20100S-M3, VB20100S-M3, VI20100S-M3
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.185 (4.70)
0.175 (4.44)
0.411 (10.45) MAX.
0.250 (6.35) MIN.
30° (TYP.)
(REF.)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
K
0.950 (24.13)
0.920 (23.37)
1
PIN
2
0.510 (12.95)
0.470 (11.94)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.330 (8.38)
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.022 (0.56)
0.014 (0.35)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
NC
K
A
0.624 (15.85)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 13-Mar-18
Document Number: 87648
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
1
Document Number: 91000
Mouser Electronics
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