VB20120C-M3/8W

VB20120C-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS ® • Trench MOS Schottky technology D2PAK (TO-263AB) • Low forward voltage drop, low power losses K • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 VB20120C PIN 1 PIN 2 K TYPICAL APPLICATIONS HEATSINK DESIGN SUPPORT TOOLS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. click logo to get started MECHANICAL DATA Models Available Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 120 V IFSM 120 A VF at IF = 10 A 0.64 V TJ max. 150 °C Package D2PAK (TO-263AB) Circuit configuration Common cathode Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode SYMBOL VB20120C UNIT VRRM 120 V 20 IF(AV) 10 IFSM Voltage rate of change (rated VR) Operating junction and storage temperature range A 120 dV/dt 10 000 TJ, TSTG -40 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A Instantaneous forward voltage per diode (1) IF = 10 A IF = 5 A IF = 10 A VR = 90 V Reverse current per diode (2) VR = 120 V SYMBOL TA = 25 °C VF TYP. MAX. UNIT 0.62 - V 0.81 0.90 0.54 - 0.65 0.72 TA = 25 °C 8 - μA TA = 125 °C 6 - mA - 700 μA 14 45 mA TA = 125 °C TA = 25 °C TA = 125 °C IR Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms Revision: 19-Jun-2018 Document Number: 87969 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VB20120C-M3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VB20120C UNIT RJC 2.8 °C/W Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VB20120SC-M3/4W 1.38 4W 50/tube Tube TO-263AB VB20120SC-M3/8W 1.38 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Resistive or Inductive Load Instantaneous Forward Current (A) Average Forward Rectified Current (A) 25 20 15 10 5 Mounted on Specific Heatsink 0 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 TA = 25 °C 0.1 0 25 50 75 100 125 150 175 0 0.2 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve 0.6 0.8 1.0 1.2 1.4 1.6 Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 10 100 D = 0.8 D = 0.5 8 Instantaneous Reverse Current (mA) Average Power Loss (W) 0.4 Instantaneous Forward Voltage (V) D = 0.3 6 D = 0.2 D = 1.0 D = 0.1 4 T 2 D = tp/T tp 8 10 0 0 2 4 6 12 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C 0.1 TA = 25 °C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 19-Jun-2018 Document Number: 87969 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VB20120C-M3 www.vishay.com Vishay General Semiconductor 10 Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 1 0.01 10 0.1 1 10 Junction to Case 100 0.1 1 10 100 t - Pulse Duration (s) Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 19-Jun-2018 Document Number: 87969 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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