V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3
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Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
FEATURES
TMBS ®
TO-220AB
ITO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
V20120SG
3
1
VF20120SG
1
PIN 1
PIN 2
PIN 1
PIN 3
CASE
PIN 3
D2PAK (TO-263AB)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
3
2
PIN 2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TO-262AA
TYPICAL APPLICATIONS
K
K
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
A
NC
VB20120SG
NC
VI20120SG
K
HEATSINK
A
DESIGN SUPPORT TOOLS
1
PIN 1
PIN 2
PIN 3
K
2
MECHANICAL DATA
3
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB),
and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
click logo to get started
Models
per
Polarity: as marked
Available
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
120 V
IFSM
150 A
VF at IF = 20 A
0.78 V
TJ max.
150 °C
Package
TO-220AB, ITO-220AB,
D2PAK (TO-263AB), TO-262AA
Circuit configuration
Single
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20120SG VF20120SG VB20120SG VI20120SG
UNIT
Maximum repetitive peak reverse voltage
VRRM
120
V
Maximum average forward rectified current (fig. 1)
IF(AV)
20
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH
EAS
80
mJ
Peak repetitive reverse current
at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
IRRM
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V
VAC
1500
V
TJ, TSTG
-40 to +150
°C
Isolation voltage (ITO-220AB only) from terminal to heatsink
t = 1 min
Operating junction and storage temperature range
Revision: 18-Jun-2018
Document Number: 88994
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IR = 1.0 mA
Breakdown voltage
SYMBOL
TYP.
MAX.
UNIT
VBR
120 (minimum)
-
V
0.62
-
TA = 25 °C
IF = 5 A
IF = 10 A
TA = 25 °C
IF = 20 A
Instantaneous forward voltage
VF (1)
IF = 5 A
TA = 125 °C
IF = 10 A
Reverse current
VR = 120 V
-
1.20
1.33
0.54
-
V
0.65
-
0.78
0.88
TA = 25 °C
10
-
µA
TA = 125 °C
7
-
mA
-
250
µA
12
25
mA
IF = 20 A
VR = 90 V
0.81
IR (2)
TA = 25 °C
TA = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20120SG
RJC
2.2
Typical thermal resistance
VF20120SG VB20120SG
4.2
VI20120SG
UNIT
2.2
°C/W
2.2
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
V20120SG-E3/4W
PREFERRED P/N
1.88
4W
50/tube
Tube
ITO-220AB
VF20120SG-E3/4W
1.75
4W
50/tube
Tube
TO-263AB
VB20120SG-E3/4W
1.38
4W
50/tube
Tube
TO-263AB
VB20120SG-E3/8W
1.38
8W
800/reel
Tape and reel
TO-262AA
VI20120SG-E3/4W
1.45
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
25
35
Average Power Loss (W)
Average Forward Current (A)
30
20
V(B,I)20120SG
15
D = 0.8
D = 0.5
Resistive or Inductive Load
VF20120SG
10
5
D = 0.3
D = 0.2
25
D = 1.0
20
D = 0.1
15
T
10
5
Mounted on Specific Heatsink
0
D = tp/T
tp
16
20
0
0
25
50
75
100
125
150
175
0
4
8
12
24
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 18-Jun-2018
Document Number: 88994
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3
www.vishay.com
Vishay General Semiconductor
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V(B,I)20120SG
1
0.01
1.6
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
Junction to Case
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
10
20
30
40
50
60
70
80
90
100
Junction to Case
1
VF20120SG
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 7 - Typical Transient Thermal Impedance
Junction Capacitance (pF)
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Revision: 18-Jun-2018
Document Number: 88994
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.161 (4.08)
0.139 (3.53)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.603 (15.32)
0.573 (14.55)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 18-Jun-2018
Document Number: 88994
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.950 (24.13)
0.920 (23.37)
1
PIN
2 3
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.022 (0.56)
0.014 (0.35)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
NC
K
A
0.624 (15.85)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 18-Jun-2018
Document Number: 88994
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000