VB20120SG-M3
www.vishay.com
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
D2PAK (TO-263AB)
K
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
A
NC
VB20120SG
NC
A
DESIGN SUPPORT TOOLS
K
TYPICAL APPLICATIONS
HEATSINK
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
click logo to get started
MECHANICAL DATA
Models
Available
Case: D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
120 V
IFSM
150 A
VF at IF = 20 A
0.78 V
TJ max.
150 °C
Package
D2PAK (TO-263AB)
Circuit configuration
Single
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VB20120SG
Maximum repetitive peak reverse voltage
VRRM
120
V
Maximum average forward rectified current (fig. 1)
IF(AV)
20
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
IFSM
150
A
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
10 000
TJ, TSTG
-55 to +150
UNIT
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 10 A
Instantaneous forward voltage (1)
TA = 25 °C
IF = 20 A
VF
IF = 5 A
IF = 10 A
TA = 125 °C
IF = 20 A
VR = 60 V
Reverse current (2)
VR = 120 V
TYP.
MAX.
0.62
-
0.81
-
1.20
1.33
0.54
-
0.65
-
UNIT
V
0.78
0.88
TA = 25 °C
10
-
μA
TA = 125 °C
7
-
mA
-
250
μA
12
25
mA
TA = 25 °C
TA = 125 °C
IR
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
Revision: 19-Jun-2018
Document Number: 87968
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB20120SG-M3
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VB20120G
UNIT
RJC
2.2
°C/W
Typical thermal resistance
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-263AB
VB20120SG-M3/4W
1.38
4W
50/tube
Tube
TO-263AB
VB20120SG-M3/8W
1.38
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
25
100
Instantaneous Forward Current (A)
Average Forward Current (A)
Resistive or Inductive Load
20
15
10
5
Mounted on Specific Heatsink
0
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0
25
50
75
100
125
150
175
0
0.2
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
D = 0.3
D = 0.2
25
D = 1.0
20
D = 0.1
15
T
10
5
0.8
1.0
1.2
1.4
1.6
100
D = 0.8
D = tp/T
tp
16
20
0
Instantaneous Reverse Current (mA)
Average Power Loss (W)
30
0.6
Fig. 3 - Typical Instantaneous Forward Characteristics
35
D = 0.5
0.4
Instantaneous Forward Voltage (V)
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
0
4
8
12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
24
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Revision: 19-Jun-2018
Document Number: 87968
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB20120SG-M3
www.vishay.com
Vishay General Semiconductor
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
10 000
1000
100
1
0.01
10
0.1
1
10
Junction to Case
100
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
NC K
A
0.624 (15.85)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 19-Jun-2018
Document Number: 87968
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000