V20202G, VF20202G, VB20202G, VI20202G
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Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.61 V at IF = 5 A
FEATURES
TMBS ®
TO-220AB
• Trench MOS Schottky technology Gen 2
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
3
1
V20202G
1
VF20202G
PIN 1
PIN 2
PIN 1
PIN 3
CASE
PIN 3
TO-263AB
2
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PIN 2
TYPICAL APPLICATIONS
TO-262AA
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
K
K
MECHANICAL DATA
2
1
1
VB20202G
PIN 1
Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
VI20202G
K
PIN 2
2
3
HEATSINK
PIN 1
PIN 2
PIN 3
K
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
200 V
IFSM
130 A
per
Polarity: As marked
Mounting Torque: 10 in-lbs max.
VF at IF = 10 A (TA = 125 °C)
0.71 V
TJ max.
175 °C
Package
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations
Common cathode
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
VRRM
per device
per diode
IF(AV)
V20202G
VF20202G
VB20202G
200
20
10
VI20202G
UNIT
V
A
Maximum DC reverse voltage
VDC
160
V
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
130
A
dV/dt
10 000
V/μs
VAC
1500
V
TJ, TSTG
-40 to +175
°C
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to heatsink, t = 1 min
Operating junction and storage temperature range
Revision: 12-Dec-16
Document Number: 87798
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ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 5 A
Instantaneous forward voltage per diode (1)
IF = 10 A
IF = 5 A
IF = 10 A
VR = 160 V
Reverse current per diode (2)
VR = 200 V
SYMBOL
TA = 25 °C
VF
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR
TA = 25 °C
TA = 125 °C
TYP.
MAX.
0.76
-
UNIT
0.84
0.92
0.61
-
0.71
0.8
0.3
-
μA
0.5
-
mA
-
150
μA
1.5
8
mA
VI20202G
UNIT
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 5 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20202G
VF20202G
RJC
2.8
5.0
2.8
per device
RJC
1.6
3.5
1.6
per device
RJA (1)(2)
52
60
52
per diode
Typical thermal resistance
VB20202G
°C/W
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
JA
(2) Free air, without heatsink
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
V20202G-M3/4W
PREFERRED P/N
1.88
4W
50/tube
Tube
ITO-220AB
VF20202G-M3/4W
1.75
4W
50/tube
Tube
TO-263AB
VB20202G-M3/4W
1.39
4W
50/tube
Tube
TO-263AB
VB20202G-M3/8W
1.39
8W
800/reel
Tape and reel
TO-262AA
VI20202G-M3/4W
1.45
4W
50/tube
Tube
Revision: 12-Dec-16
Document Number: 87798
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay General Semiconductor
22
100 000
RthJA = RthJC
20
Instantaneous Reverse Current (μA)
Average Forward Rectified Current (A)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
18
16
14
12
V(B,I)20202G
VF20202G
10
8
6
TA , RthJA
4
2
10 000
TA = 175 °C
1000
TA = 150 °C
TA = 125 °C
100
TA = 100 °C
0
25
50
75
100
125
150
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
1000
9
D = 0.8
8
TJ = 25 °C
f = 1 MHz
Vsig = 50 mVp-p
D = 0.5
Junction Capacitance (pF)
Average Power Loss (W)
TA = 25 °C
0.1
175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
(D = Duty Cycle = 0.5)
D = 0.3
7
D = 1.0
D = 0.2
6
5
D = 0.1
4
T
3
2
1
D = tp/T
100
tp
10
0
0
2
4
6
8
10
0.1
12
TA = 175 °C
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
TA = 25 °C
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10
100
Fig. 5 - Typical Junction Capacitance Per Diode
Transient Thermal Impedance (°C/W)
100
1
Reverse Voltage (V)
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Instantaneous Forward Current (A)
1
0.01
0
1
10
10
Junction to Case
1
V(B,I)20202G
VF20202G
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Device
Revision: 12-Dec-16
Document Number: 87798
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.161 (4.08)
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
PIN
1 2 3
0.635 (16.13)
0.625 (15.87)
0.160 (4.06)
0.140 (3.56)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.057 (1.45)
0.045 (1.14)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
ITO-220AB
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.076 (1.93) REF.
45° REF.
0.600 (15.24)
0.580 (14.73)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.671 (17.04)
0.651 (16.54)
PIN
1
0.560 (14.22)
0.530 (13.46)
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
2
3
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
7° REF.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
Revision: 12-Dec-16
Document Number: 87798
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V20202G, VF20202G, VB20202G, VI20202G
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.950 (24.13)
0.920 (23.37)
1
PIN
2 3
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.401 (10.19)
0.381 (9.68)
0.022 (0.56)
0.014 (0.35)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 12-Dec-16
Document Number: 87798
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
1
Document Number: 91000