VB20M120C
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
D2PAK (TO-263AB)
• Low forward voltage drop, low power losses
K
• High efficiency operation
• Meets MSL level 1, per
LF maximum peak of 245 °C
2
1
PIN 2
Available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VB20M120C
PIN 1
J-STD-020,
K
TYPICAL APPLICATIONS
HEATSINK
DESIGN SUPPORT TOOLS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
click logo to get started
MECHANICAL DATA
Models
Case: D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Available
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
120 V
IFSM
120 A
VF at IF = 10 A
0.64 V
TJ max.
150 °C
Package
D2PAK (TO-263AB)
Circuit configuration
Common cathode
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 and M3 suffix meets JESD 201 class 2 whisker test
Polarity: as marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
SYMBOL
VB20M120C
UNIT
VRRM
120
V
20
IF(AV)
10
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
A
120
dV/dt
10 000
V/μs
TJ, TSTG
-40 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 5 A
Instantaneous forward voltage per diode
IF = 10 A
IF = 5 A
IF = 10 A
VR = 90 V
Reverse current per diode
VR = 120 V
SYMBOL
TA = 25 °C
VF (1)
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR (2)
TYP.
MAX.
UNIT
0.65
-
0.82
0.91
0.55
-
0.64
0.72
3
-
μA
1.5
-
mA
-
700
μA
4
25
mA
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 20 ms
Revision: 19-Jun-2018
Document Number: 89466
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB20M120C
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VB20M120C
UNIT
RJC
2.8
°C/W
Typical thermal resistance per diode
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-263AB
VB20M120C-E3/4W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.37
4W
50/tube
Tube
TO-263AB
VB20M120C-E3/8W
1.37
8W
800/reel
Tape and reel
TO-263AB
VB20M120C-M3/I
1.37
I
800/reel
Tape and reel
100
25
Instantaneous Forward Current (A)
Average Forward Rectified Current (A)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Resistive or Inductive Load
20
15
10
5
Mounted on Specific Heatsink
0
0
25
75
50
100
125
150
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
175
Case Temperature (°C)
Instantaneous Forward Voltage (V)
9.0
8.0
Average Power Loss (W)
D = 0.8
D = 0.5
D = 0.3
D = 0.2
7.0
D = 0.1
6.0
D = 1.0
5.0
4.0
T
3.0
2.0
1.0
D = tp/T
tp
0.0
0
1
2
3
4
5
6
7
8
9
10 11 12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Instantaneous Reverse Current (mA)
Fig. 1 - Maximum Forward Current Derating Curve
100
10
TA = 150 °C
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
0.0001
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Revision: 19-Jun-2018
Document Number: 89466
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB20M120C
www.vishay.com
Vishay General Semiconductor
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
10
0.1
1
10
10
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
10 000
Junction to Case
1
0.01
100
Reverse Voltage (V)
0.1
1
10
100
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591(15.00)
0.055 (1.40)
0.045 (1.14)
0.42
MIN.
(10.66)
0.33
(8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0-0.01 (0-0.254)
0.037 (0.940)
0.027 (0.686)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
Mounting Pad Layout
0.670 (17.02)
0.591 (15.00)
0.15
(3.81) MIN.
0.08
MIN.
(2.032)
0.105 (2.67)
0.095 (2.41)
Revision: 19-Jun-2018
Document Number: 89466
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000
