V30100C-E3, VF30100C-E3, VB30100C-E3, VI30100C-E3
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Vishay General Semiconductor
Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.455 V at IF = 5 A
TO-220AB
FEATURES
ITO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
2
3
V30100C
2
1
1
3
VF30100C
PIN 1
PIN 2
PIN 1
PIN 3
CASE
PIN 3
D2PAK (TO-263AB)
• Low thermal resistance
PIN 2
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
TO-262AA
K
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
K
TYPICAL APPLICATIONS
2
1
1
VB30100C
PIN 1
2
3
VI30100C
K
PIN 2
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
HEATSINK
PIN 1
PIN 2
PIN 3
K
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
ADDITIONAL RESOURCES
3D 3D
3D Models
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
100 V
IFSM
160 A
VF at IF = 15 A
0.63 V
per
Polarity: as marked
TJ max.
150 °C
Package
TO-220AB, ITO-220AB,
D2PAK (TO-263AB), TO-262AA
Circuit configuration
Common cathode
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
SYMBOL
PARAMETER
VRRM
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
IF(AV)
V30100C VF30100C VB30100C
100
30
15
VI30100C
UNIT
V
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
160
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode
EAS
210
mJ
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
IRRM
1.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
VAC
1500
V
TJ, TSTG
-40 to +150
°C
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
Revision: 15-Oct-2019
Document Number: 89010
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30100C-E3, VF30100C-E3, VB30100C-E3, VI30100C-E3
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Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IR = 10 mA
Breakdown voltage
SYMBOL
TYP.
MAX.
UNIT
VBR
100 (minimum)
-
V
0.516
-
TA = 25 °C
IF = 5 A
IF = 7.5 A
Instantaneous forward voltage
per diode
TA = 25 °C
IF = 15 A
VF (1)
IF = 5 A
TA = 125 °C
IF = 7.5 A
Reverse current per diode
0.455
-
V
0.522
0.68
TA = 25 °C
7.2
-
µA
TA = 125 °C
8.0
-
mA
65
500
µA
20
35
mA
IR (2)
TA = 25 °C
VR = 100 V
0.80
0.627
IF = 15 A
VR = 70 V
0.576
0.734
TA = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
V30100C
VF30100C
VB30100C
VI30100C
UNIT
RJC
2.5
5.5
2.5
2.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
V30100C-E3/4W
1.88
4W
50/tube
Tube
ITO-220AB
VF30100C-E3/4W
1.75
4W
50/tube
Tube
TO-263AB
VB30100C-E3/4W
1.39
4W
50/tube
Tube
TO-263AB
VB30100C-E3/8W
1.39
8W
800/reel
Tape and reel
TO-262AA
VI30100C-E3/4W
1.46
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
35
14
D = 0.3
30
12
VF30100C
V30100C
25
VI(B)30100C
20
15
10
Average Power Loss (W)
Average Forward Current (A)
Resistive or Inductive Load
D = 1.0
8
6
T
4
2
0
0
25
50
75
100
125
150
D = 0.2
D = 0.1
10
5
0
D = 0.8
D = 0.5
D = tp/T
0
2
4
6
8
10
12
tp
14
16
18
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 15-Oct-2019
Document Number: 89010
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30100C-E3, VF30100C-E3, VB30100C-E3, VI30100C-E3
www.vishay.com
Vishay General Semiconductor
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TA = 150 °C
TA = 125 °C
10
TA = 25 °C
1
0.2
0.4
0.6
0.8
1.0
1.2
1
0.1
0.01
V(I)30100C
0.001
0.01
0.1
0
Junction to Case
1.4
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
TA = 150 °C
10
TA = 125 °C
1
0.1
TA = 25 °C
0.01
0.001
10
20
30
40
50
60
70
80
90
100
Junction to Case
VF30100C
1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 7 - Typical Transient Thermal Impedance Per Diode
Junction Capacitance (pF)
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Revision: 15-Oct-2019
Document Number: 89010
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30100C-E3, VF30100C-E3, VB30100C-E3, VI30100C-E3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.161 (4.08)
0.139 (3.53)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.603 (15.32)
0.573 (14.55)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 15-Oct-2019
Document Number: 89010
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30100C-E3, VF30100C-E3, VB30100C-E3, VI30100C-E3
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.950 (24.13)
0.920 (23.37)
1
PIN
2 3
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
D2PAK (TO-263AB)
0.411 (10.45)
0.190 (4.83)
0.380 (9.65)
0.160 (4.06)
0.401 (10.19)
0.381 (9.68)
0.022 (0.56)
0.014 (0.35)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
0.245 (6.22)
MIN.
K
0.33 (8.38) MIN.
0.055 (1.40)
0.360 (9.14)
0.624 (15.85)
0.320 (8.13)
12 K
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.037 (0.940)
0.090 (2.29)
0.027 (0.686)
0.105 (2.67)
0.021 (0.53)
0.014 (0.36)
0.095 (2.41)
0.15 (3.81) MIN.
0.08 (2.032) MI N.
0.205 (5.20)
0.140 (3.56)
0.105 (2.67)
0.195 (4.95)
0.110 (2.79)
0.095 (2.41)
Revision: 15-Oct-2019
Document Number: 89010
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
1
Document Number: 91000