VB30100SG-M3/8W

VB30100SG-M3 www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A FEATURES TMBS ® • Trench MOS Schottky technology • Low forward voltage drop, low power losses D2PAK (TO-263AB) K • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 A NC VB30100SG NC A K TYPICAL APPLICATIONS HEATSINK DESIGN SUPPORT TOOLS click logo to get started For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. Models Available MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM 100 V IFSM 250 A VF at IF = 30 A 0.76 V TJ max. 150 °C Package D2PAK (TO-263AB) Circuit configuration Single Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VB30100SG Maximum repetitive peak reverse voltage VRRM 100 V Maximum average forward rectified current (fig. 1) IF(AV) 30 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range UNIT IFSM 250 A dV/dt 10 000 V/μs TJ, TSTG -40 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 10 A Instantaneous forward voltage (1) TA = 25 °C IF = 30 A VF IF = 5 A IF = 10 A TA = 125 °C Reverse current (2) VR = 100 V MAX. 0.50 - 0.60 - 0.92 1.00 0.44 - UNIT V 0.55 - 0.76 0.83 TA = 25 °C 8.8 - μA TA = 125 °C 6.5 - mA 43 350 μA 18 35 mA IF = 30 A VR = 70 V TYP. TA = 25 °C TA = 125 °C IR Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms Revision: 20-Jun-2018 Document Number: 87986 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VB30100SG-M3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VB30100SG UNIT RJC 2.0 °C/W Typical thermal resistance per leg ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY TO-263AB VB30100SG-M3/4W 1.37 4W 50/tube DELIVERY MODE Tube TO-263AB VB30100SG-M3/8W 1.37 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 35 100 Instantaneous Forward Current (A) Average Forward Current (A) Resistive or Inductive Load 30 25 20 15 10 5 0 0 25 50 75 100 125 TA = 150 °C TA = 125 °C 10 TA = 25 °C 1 0.1 150 0 0.2 Case Temperature (°C) Fig. 1 - Forward Current Derating Curve Instantaneous Reverse Current (mA) Average Power Loss (W) D = 0.2 24 D = 1.0 D = 0.1 20 16 12 T 8 4 0.8 1.0 1.2 100 D = 0.8 D = 0.3 28 0.6 Fig. 3 - Typical Instantaneous Forward Characteristics 32 D = 0.5 0.4 Instantaneous Forward Voltage (V) D = tp/T tp 0 TA = 150 °C 10 TA = 125 °C 1 0.1 TA = 25 °C 0.01 0.001 0 4 8 12 16 20 24 28 32 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics 36 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Revision: 20-Jun-2018 Document Number: 87986 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VB30100SG-M3 www.vishay.com Vishay General Semiconductor 10 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 10 000 1000 100 0.1 1 10 Junction to Case 1 0.1 0.01 0.001 0.01 100 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) NC K A 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 20-Jun-2018 Document Number: 87986 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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