VB30150C-M3/8W

VB30150C-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5.0 A FEATURES TMBS ® • • • • Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D2PAK (TO-263AB) K 2 1 VB30150C PIN 1 PIN 2 K HEATSINK DESIGN SUPPORT TOOLS TYPICAL APPLICATIONS click logo to get started For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. Models Available MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum 2 x 15 A VRRM 150 V IFSM 140 A VF at IF = 15 A 0.71 V TJ max. 150 °C Package D2PAK (TO-263AB) Circuit configuration Common cathode MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig. 1) per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range SYMBOL VB30150C UNIT VRRM 150 V 30 IF(AV) A 15 140 A dV/dt 10 000 V/μs TJ, TSTG -55 to +150 °C IFSM ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5.0 A IF = 7.5 A Instantaneous forward voltage per diode (1) TA = 25 °C IF = 15 A VF IF = 5.0 A IF = 7.5 A TA = 125 °C Reverse current per diode (2) VR = 150 V MAX. 0.72 - 0.81 - 1.11 1.36 0.56 - UNIT V 0.61 - 0.71 0.79 TA = 25 °C 1.5 - μA TA = 125 °C 2 - mA - 200 μA 4 20 mA IF = 15 A VR = 100 V TYP. TA = 25 °C TA = 125 °C IR Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms Revision: 20-Jun-2018 Document Number: 87995 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VB30150C-M3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL VB30150C UNIT RJC 2.2 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY TO-263AB VB30150C-M3/4W 1.39 4W 50/tube DELIVERY MODE Tube TO-263AB VB30150C-M3/8W 1.39 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Resistive or Inductive Load Instantaneous Forward Current (A) Average Forward Rectified Current (A) 40 30 20 10 Mounted on Specific Heatsink 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0 0 25 50 75 100 125 150 0 175 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Case Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 14 100 Instantaneous Reverse Current (mA) D = 0.8 D = 0.5 12 Average Power Loss (W) TA = 150 °C D = 0.3 D = 0.2 10 8 D = 1.0 D = 0.1 6 T 4 2 D = tp/T tp TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C 0.1 0.01 TA = 25 °C 0.001 0.0001 0 0 2 4 6 8 10 12 14 16 18 10 20 30 40 50 60 70 80 90 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Forward Power Dissipation Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 20-Jun-2018 Document Number: 87995 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VB30150C-M3 www.vishay.com Vishay General Semiconductor 10 Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 1 0.01 10 0.1 1 10 Junction to Case 100 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 20-Jun-2018 Document Number: 87995 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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