V30202C, VF30202C, VB30202C, VI30202C
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Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
FEATURES
TMBS ®
TO-220AB
• Trench MOS Schottky technology Gen 2
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
3
1
V30202C
1
VF30202C
PIN 1
PIN 2
PIN 1
PIN 3
CASE
PIN 3
TO-263AB
2
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PIN 2
TYPICAL APPLICATIONS
TO-262AA
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
K
K
MECHANICAL DATA
2
1
1
VB30202C
PIN 1
Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
VI30202C
K
PIN 2
2
3
HEATSINK
PIN 1
PIN 2
PIN 3
K
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker testt
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
200 V
IFSM
260 A
VF at IF = 15 A (TA = 125 °C)
0.65 V
per
Polarity: as marked
Mounting Torque: 10 in-lbs max.
TJ max.
175 °C
Package
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations
Common cathode
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
VRRM
per device
per diode
IF(AV)
V30202C
VF30202C VB30202C
200
30
15
VI30202C
UNIT
V
A
Maximum DC reverse voltage
VDC
160
V
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
260
A
dV/dt
10 000
V/μs
VAC
1500
V
TJ, TSTG
-40 to +175
°C
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to heatsink, t = 1 min
Operating junction and storage temperature range
Revision: 14-May-2018
Document Number: 87799
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30202C, VF30202C, VB30202C, VI30202C
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Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 10 A
Instantaneous forward voltage per diode (1)
TA = 25 °C
IF = 15 A
VF
IF = 5 A
IF = 10 A
TA = 125 °C
IF = 15 A
VR = 160 V
Reverse current per diode (2)
VR = 200 V
TA = 25 °C
TA = 125 °C
IR
TA = 25 °C
TA = 125 °C
TYP.
MAX.
0.69
-
UNIT
0.75
-
0.80
0.88
0.54
-
0.61
-
0.65
0.72
0.8
-
μA
1.5
-
mA
-
250
μA
4.0
14
mA
VI30202C
UNIT
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 5 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
V30202C
VF30202C
per diode
RJC
1.8
4.0
1.8
per device
RJC
1.0
2.8
1.0
52
60
52
per device
RJA
(1)(2)
VB30202C
°C/W
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
JA
(2) Free air, without heatsink
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
V30202C-M3/4W
PREFERRED P/N
1.89
4W
50/tube
Tube
ITO-220AB
VF30202C-M3/4W
1.75
4W
50/tube
Tube
TO-263AB
VB30202C-M3/4W
1.38
4W
50/tube
Tube
TO-263AB
VB30202C-M3/8W
1.38
8W
800/reel
Tape and reel
TO-262AA
VI30202C-M3/4W
1.46
4W
50/tube
Tube
Revision: 14-May-2018
Document Number: 87799
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30202C, VF30202C, VB30202C, VI30202C
www.vishay.com
Vishay General Semiconductor
32
100 000
RthJA = Rth JC
Instantaneous Reverse Current (μA)
Average Forward Rectified Current (A)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
28
24
20
V(B,I)30202C
VF30202C
16
12
8
TA, RthJA
4
0
0
25
50
75
100
125
150
175
TA = 175 °C
10 000
TA = 100 °C
100
10
1
0.01
10
40
50
60
70
80
90
100
10 000
D = 1.0
D = 0.1
T
D = tp/T
Junction Capacitance (pF)
Average Power Loss (W)
30
Fig. 4 - Typical Reverse Characteristics Per Diode
D = 0.8
D = 0.2
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
tp
10
0
2
4
6
8
10
12
14
16
0.1
18
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
TA = 175 °C
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
TA = 25 °C
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Transient Thermal Impedance (°C/W)
100
Instantaneous Forward Current (A)
20
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
D = 0.5
D = 0.3
TA = 25 °C
0.1
Case Temperature (°C)
13
12
11
10
9
8
7
6
5
4
3
2
1
0
TA = 150 °C
TA = 125 °C
1000
10
Junction to Case
1
V(B,I)30202C
VF30202C
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Device
Revision: 14-May-2018
Document Number: 87799
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30202C, VF30202C, VB30202C, VI30202C
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.161 (4.08)
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
PIN
1 2 3
0.635 (16.13)
0.625 (15.87)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 14-May-2018
Document Number: 87799
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30202C, VF30202C, VB30202C, VI30202C
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.950 (24.13)
0.920 (23.37)
1
PIN
2 3
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.401 (10.19)
0.381 (9.68)
0.022 (0.56)
0.014 (0.35)
Mounting Pad Layout
0.42 (10.66) min.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 14-May-2018
Document Number: 87799
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 01-Jan-2023
1
Document Number: 91000