V40100C-E3, VF40100C-E3, VB40100C-E3, VI40100C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.38 V at IF = 5 A
FEATURES
TMBS®
TO-220AB
ITO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
2
3
1
V40100C
2
1
3
PIN 1
PIN 2
PIN 1
PIN 3
CASE
PIN 3
D2PAK (TO-263AB)
• Low thermal resistance
• Solder bath temperature 275 °C maximum, 10 s, per JESD
22-B106 (for TO-220AB, ITO-220AB, and TO-262AA
package)
VF40100C
PIN 2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TO-262AA
K
K
TYPICAL APPLICATIONS
2
1
VB40100C
PIN 1
VI40100C
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS
1
2
PIN 1
PIN 2
PIN 3
K
3
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
click logo to get started
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Models
Available
PRIMARY CHARACTERISTICS
per
Polarity: as marked
IF(AV)
2 x 20 A
VRRM
100 V
Mounting Torque: 10 in-lbs maximum
IFSM
250 A
VF at IF = 20 A
0.61 V
TJ max.
150 °C
Package
TO-220AB, ITO-220AB,
D2PAK (TO-263AB), TO-262AA
Circuit configuration
Common cathode
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V40100C VF40100C VB40100C VI40100C UNIT
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
VRRM
per device
per diode
IF(AV)
100
40
20
V
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
250
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 90 mH per diode
EAS
230
mJ
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
IRRM
1.0
A
dV/dt
10 000
V/μs
TJ, TSTG
-40 to +150
°C
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Revision: 19-Jun-2018
Document Number: 89042
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40100C-E3, VF40100C-E3, VB40100C-E3, VI40100C-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IR = 1.0 mA
Breakdown voltage (2)
TA = 25 °C
VBR
IR = 10 mA
TYP.
MAX.
100
(minimum)
-
105
(minimum)
-
IF = 5 A
IF = 10 A
TA = 25 °C
IF = 20 A
Instantaneous forward voltage per diode (1)
VF
IF = 5 A
IF = 10 A
TA = 125 °C
IF = 20 A
VR = 70 V
Reverse current at rated VR per diode (2)
VR = 100 V
UNIT
V
0.47
-
0.54
-
0.67
0.73
0.38
-
0.45
-
0.61
0.67
V
TA = 25 °C
9
-
μA
TA = 125 °C
10
-
mA
-
1000
μA
21
45
mA
IR
TA = 25 °C
TA = 125 °C
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40100C
VF40100C
VB40100C
VI40100C
UNIT
RJC
2.0
4.0
2.0
2.0
°C/W
Typical thermal resistance per diode
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
TO-220AB
V40100C-E3/4W
1.85
4W
50/tube
DELIVERY MODE
Tube
ITO-220AB
VF40100C-E3/4W
1.75
4W
50/tube
Tube
TO-263AB
VB40100C-E3/4W
1.39
4W
50/tube
Tube
TO-263AB
VB40100C-E3/8W
1.39
8W
800/tube
Tape and reel
TO-262AA
VI40100C-E3/4W
1.46
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
18
50
16
VB40100C
V40100C
30
Average Power Loss (W)
Average Forward Current (A)
VI40100C
40
VF40100C
20
10
D = 0.5
14
D = 0.8
D = 0.3
12
D = 0.2
10
8
D = 1.0
D = 0.1
T
6
4
2
D = tp/T
tp
0
0
0
25
50
75
100
125
150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
175
0
5
10
15
20
25
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 19-Jun-2018
Document Number: 89042
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40100C-E3, VF40100C-E3, VB40100C-E3, VI40100C-E3
www.vishay.com
Vishay General Semiconductor
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2
0.4
0.6
0.8
Junction to Case
1
V(I)40100C
0.1
0.01
1
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
0.1
TA = 25 °C
0.01
0.001
10
20
30
40
50
60
70
80
90
100
Junction to Case
10
1
VF40100C
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 7 - Typical Transient Thermal Impedance Per Diode
Junction Capacitance (pF)
10 000
1000
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Revision: 19-Jun-2018
Document Number: 89042
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40100C-E3, VF40100C-E3, VB40100C-E3, VI40100C-E3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.161 (4.08)
0.139 (3.53)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.603 (15.32)
0.573 (14.55)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 19-Jun-2018
Document Number: 89042
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40100C-E3, VF40100C-E3, VB40100C-E3, VI40100C-E3
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.950 (24.13)
0.920 (23.37)
1
PIN
2 3
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
D2PAK (TO-263AB)
0.411 (10.45)
0.190 (4.83)
0.380 (9.65)
0.160 (4.06)
0.401 (10.19)
0.381 (9.68)
0.022 (0.56)
0.014 (0.35)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
0.245 (6.22)
MIN.
K
0.33 (8.38) MIN.
0.055 (1.40)
0.360 (9.14)
0.624 (15.85)
0.320 (8.13)
12 K
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.037 (0.940)
0.090 (2.29)
0.027 (0.686)
0.105 (2.67)
0.021 (0.53)
0.014 (0.36)
0.095 (2.41)
0.15 (3.81) MIN.
0.08 (2.032) MI N.
0.205 (5.20)
0.140 (3.56)
0.105 (2.67)
0.195 (4.95)
0.110 (2.79)
0.095 (2.41)
Revision: 19-Jun-2018
Document Number: 89042
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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Revision: 01-Jan-2019
1
Document Number: 91000
