VB40170CHM3/I

VB40170C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS ® • Trench MOS Schottky technology D2PAK (TO-263AB) • Low forward voltage drop, low power losses K • High efficiency operation • Meets MSL level 1, per LF maximum peak of 245 °C 2 PIN 2 Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 VB40170C PIN 1 J-STD-020, K TYPICAL APPLICATIONS HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Available Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 170 V IFSM 200 A VF at IF = 20 A 0.68 V Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 and M3 suffix meet JESD 201 class 2 whisker test TJ max. 175 °C Package D2PAK (TO-263AB) Polarity: as marked Circuit configuration Common cathode Mounting Torque: 10 in-lbs maximum per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig. 1) per diode SYMBOL VB40170C UNIT VRRM 170 V 40 IF(AV) A 20 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs TJ, TSTG -40 to +175 °C Operating junction and storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 10 A Instantaneous forward voltage per diode TA = 25 °C IF = 20 A VF (1) IF = 5 A IF = 10 A TA = 125 °C Reverse current per diode VR = 170 V MAX. 0.66 - 0.75 - 0.86 1.20 0.52 - UNIT V 0.59 - 0.68 0.76 TA = 25 °C 1.3 - μA TA = 125 °C 2.2 - mA - 250 μA 4.2 50 mA IF = 20 A VR = 136 V TYP. TA = 25 °C TA = 125 °C IR (2) Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width  5 ms Revision: 20-Jun-2018 Document Number: 89949 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VB40170C www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL per diode Typical thermal resistance per device VB40170C UNIT 1.2 RJC (1) °C/W 0.85 Note (1) Mounted on infinite heat sink; thermal resistance R JC - junction-to-case ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY TO-263AB VB40170C-E3/4W PREFERRED P/N 1.38 4W 50/tube DELIVERY MODE Tube TO-263AB VB40170C-E3/8W 1.38 8W 800/reel Tape and reel TO-263AB VB40170C-M3/I 1.38 I 800/reel 13" diameter plastic tape and reel 100 22 Instantaneous Forward Current (A) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 20 18 16 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 TA = 175 °C TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 175 Instantaneous Forward Voltage (V) Case Temperature (°C) Average Power Loss (W) 20.0 D = 0.5 D = 0.8 D = 0.3 D = 0.2 15.0 D = 0.1 D = 1.0 10.0 T 5.0 D = tp/T tp 0.0 0 5 10 15 20 25 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Instantaneous Reverse Current (mA) Fig. 1 - Maximum Forward Current Derating Curve 100 TA = 175 °C 10 TA = 150 °C 1 TA = 125 °C TA = 100 °C 0.1 0.01 0.001 TA = 25 °C 0.0001 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 20-Jun-2018 Document Number: 89949 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VB40170C www.vishay.com Vishay General Semiconductor Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 0.1 1 10 100 Reverse Voltage (V) 10 Junction to Case 1 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 20-Jun-2018 Document Number: 89949 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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