VB40M120C-M3/I

VB40M120C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A FEATURES TMBS ® • Trench MOS Schottky technology D2PAK (TO-263AB) • Low forward voltage drop, low power losses K • High efficiency operation • Meets MSL level 1, per LF maximum peak of 245 °C 2 1 Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VB40M120C PIN 1 J-STD-020, K TYPICAL APPLICATIONS PIN 2 HEATSINK DESIGN SUPPORT TOOLS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. click logo to get started MECHANICAL DATA Models Available Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 120 V IFSM 250 A VF at IF = 20 A 0.64 V Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 and M3 suffix meets JESD 201 class 2 whisker test TJ max. 150 °C Package D2PAK (TO-263AB) Circuit configuration Common cathode Polarity: as marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Voltage rate of change (rated VR) Operating junction and storage temperature range SYMBOL VB40M120C UNIT VRRM 120 V 40 IF(AV) 20 IFSM A 250 dV/dt 10 000 V/μs TJ, TSTG -40 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 10 A Instantaneous forward voltage per diode TA = 25 °C IF = 20 A VF (1) IF = 5 A IF = 10 A TA = 125 °C IF = 20 A VR = 90 V Reverse current per diode VR = 120 V TYP. MAX. 0.54 - 0.64 - 0.79 0.89 0.46 - 0.54 - 0.64 0.72 UNIT V TA = 25 °C 4 - μA TA = 125 °C 3 - mA - 500 μA 6 32 mA TA = 25 °C TA = 125 °C IR (2) Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  20 ms Revision: 20-Jun-2018 Document Number: 89468 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VB40M120C www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL VB40M120C UNIT RJC 1.8 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VB40M120C-E3/4W 1.39 4W 50/tube Tube TO-263AB VB40M120C-E3/8W 1.39 8W 800/reel Tape and reel TO-263AB VB40M120C-M3/I 1.39 I 800/reel Tape and reel 100 50 Resistive or Inductive Load Instantaneous Forward Current (A) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 40 30 20 10 Mounted on Specific Heatsink 0 0 25 50 75 100 125 150 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 175 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Instantaneous Forward Voltage (V) Case Temperature (°C) 18.0 Average Power Loss (W) 16.0 D = 0.3 D = 0.2 14.0 D = 0.5 D = 0.8 D = 0.1 12.0 D = 1.0 10.0 8.0 T 6.0 4.0 2.0 D = tp/T tp 0.0 0 2 4 6 8 10 12 14 16 18 20 22 24 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Instantaneous Reverse Current (mA) Fig. 1 - Maximum Forward Current Derating Curve 100 10 TA = 150 °C 1 TA = 125 °C TA = 100 °C 0.1 0.01 TA = 25 °C 0.001 0.0001 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 20-Jun-2018 Document Number: 89468 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VB40M120C www.vishay.com Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 0.1 1 10 Transient Thermal Impedance (°C/W) Vishay General Semiconductor 100 10 Junction to Case 1 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591(15.00) 0.055 (1.40) 0.045 (1.14) 0.42 MIN. (10.66) 0.33 (8.38) MIN. 0.055 (1.40) 0.047 (1.19) 0-0.01 (0-0.254) 0.037 (0.940) 0.027 (0.686) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.105 (2.67) 0.095 (2.41) 0.140 (3.56) 0.110 (2.79) 0.205 (5.20) 0.195 (4.95) Mounting Pad Layout 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 MIN. (2.032) 0.105 (2.67) 0.095 (2.41) Revision: 20-Jun-2018 Document Number: 89468 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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