VB60100C
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.36 V at IF = 5 A
FEATURES
TMBS
®
• Trench MOS Schottky technology
TO-263AB
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Low thermal resistance
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
2
• Meets MSL level 1, per
LF maximum peak of 245 °C
1
PIN 1
PIN 2
J-STD-020,
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
K
HEATSINK
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
IF(AV)
2 x 30 A
VRRM
100 V
MECHANICAL DATA
IFSM
320 A
Case: TO-263AB
VF at IF = 30 A
0.66 V
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
TJ max.
150 °C
Package
TO-263AB
Diode variation
Dual common cathode
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
per
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Operating junction and storage temperature range
SYMBOL
VB60100C
UNIT
VRRM
100
V
IF(AV)
60
30
A
IFSM
320
A
TJ, TSTG
-40 to +150
°C
Revision: 19-Jan-16
Document Number: 87641
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB60100C
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MAX.
UNIT
IF = 5 A
0.45
-
IF = 10 A
0.52
-
0.58
0.63
0.63
-
0.73
0.79
0.36
-
0.45
-
0.53
0.58
0.58
-
0.66
0.70
-
500
μA
13
20
mA
-
1000
μA
30
-
mA
IF = 15 A
TA = 25 °C
IF = 20 A
Instantaneous forward voltage per diode
TYP.
IF = 30 A
VF (1)
IF = 5 A
IF = 10 A
IF = 15 A
TA = 125 °C
IF = 20 A
IF = 30 A
TA = 25 °C
VR = 80 V
TA = 125 °C
Reverse current at rated VR per diode
VR = 100 V
TA = 25 °C
IR (2)
TA = 125 °C
V
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
VB60100C
UNIT
RJC
2.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
(1)
TO-263AB
VB60100CHE3/P
TO-263AB
VB60100CHE3/I (1)
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.38
P
50/tube
Tube
1.38
I
800/reel
Tape and reel
Note
(1) AEC-Q101 qualified
Revision: 19-Jan-16
Document Number: 87641
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB60100C
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1000
Instantaneous Reverse Current (mA)
70
Average Forward Current (A)
Resistive or Inductive Load
60
50
40
30
20
10
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
0.1
TA = 25 °C
0.01
0.001
0
0
25
50
75
100
125
150
10
175
20
30
40
50
60
90
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
Per Diode
100
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.8
Junction Capacitance (pF)
D = 0.5
25
Average Power Loss (W)
80
Percent of Rated Peak Reverse Voltage (%)
30
D = 0.3
20
D = 1.0
D = 0.2
15
D = 0.1
T
10
5
D = tp/T
1000
tp
100
0
0
5
10
15
20
25
30
0.1
35
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Per Diode
Fig. 5 - Typical Junction Capacitance
Per Diode
10
Transient Thermal Impedance (°C/W)
100
Instantaneous Forward Current (A)
70
Case Temperature (°C)
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2
0.4
0.6
0.8
1
1
0.1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Fig. 6 - Typical Transient Thermal Impedance
Per Diode
Revision: 19-Jan-16
Document Number: 87641
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VB60100C
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 19-Jan-16
Document Number: 87641
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
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Revision: 09-Jul-2021
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Document Number: 91000
