VBP104FAS

VBP104FAS, VBP104FASR www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: GW, RGW VBP104FAS • Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2 • Radiant sensitive area (in mm2): 4.4 • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm emitters • Fast response times • Angle of half sensitivity: ϕ = ± 65° • Floor life: 168 h, MSL 3, acc. J-STD-020 VBP104FASR • Lead (Pb)-free reflow soldering • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS DESCRIPTION • High speed detector for infrared radiation VBP104FAS and VBP104FASR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 4.4 mm2 sensitive area and a daylight blocking filter matched with IR emitters operating at wavelength 870 nm or 950 nm. • Infrared remote control and free air data transmission systems, e.g. in combination with TSFFxxxx series IR emitters PRODUCT SUMMARY Ira (μA) ϕ (deg) λ0.5 (nm) VBP104FAS 35 ± 65 780 to 1050 VBP104FASR 35 ± 65 780 to 1050 PACKAGE FORM COMPONENT Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS VBP104FAS Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing VBP104FASR Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb ≤ 25 °C Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.3, 24-Jun-14 Acc. reflow sloder profile fig. 8 SYMBOL VALUE UNIT VR 60 V PV 215 mW Tj 100 °C Tamb -40 to +100 °C Tstg -40 to +100 °C Tsd 260 °C RthJA 350 K/W Document Number: 81169 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBP104FAS, VBP104FASR www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 50 mA VF TYP. MAX. UNIT 1 1.3 V IR = 100 μA, E = 0 V(BR) VR = 10 V, E = 0 Iro 2 30 nA VR = 0 V, f = 1 MHz, E = 0 CD 48 VR = 3 V, f = 1 MHz, E = 0 CD 17 Ee = 1 mW/cm2, λ = 950 nm Vo 350 mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo -2.6 mV/K Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik 32 μA Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 950 nm TKIk 0.1 %/K Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira Forward voltage Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Reverse light current MIN. 60 25 ϕ Angle of half sensitivity V pF 40 pF 35 μA ± 65 deg nm Wavelength of peak sensitivity λp 950 Range of spectral bandwidth λ0.5 780 to 1050 nm VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/√Hz Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns Noise equivalent power BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 Ira - Reverse Light Current (µA) Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 40 60 80 100 Ira - Reverse Light Current (µA) VR = 5 V λ = 950 nm 1.0 0.8 0.1 1 10 Ee - Irradiance (mW/cm2) Fig. 3 - Reverse Light Current vs. Irradiance 1.4 1.2 VR = 5 V λ = 950 nm 1 94 8421 Fig. 1 - Reverse Dark Current vs. Ambient Temperature I ra rel - Relative Reverse Light Current 10 0.1 0.01 100 Tamb - Ambient Temperature (°C) 94 8403 100 λ = 950 nm 1 mW/cm2 0.5 mW/cm2 10 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 1 0.6 0 94 8409 20 40 60 80 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.3, 24-Jun-14 0.1 100 94 8422 1 10 100 VR - Reverse Voltage (V) Fig. 4 - Reverse Light Current vs. Reverse Voltage Document Number: 81169 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBP104FAS, VBP104FASR www.vishay.com Vishay Semiconductors CD - Diode Capacitance (pF) 80 E=0 f = 1 MHz 60 40 20 0 0.1 1 100 10 VR - Reverse Voltage (V) 94 8423 S(λ)φ, rel - Relative Spectral Sensitivity Fig. 5 - Diode Capacitance vs. Reverse Voltage 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 600 700 21743 800 900 1000 λ - Wavelength (nm) 1100 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 0° 10° 20° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Srel - Relative Radiant Sensitivity 30° 80° 0.6 0.4 0.2 0 94 8406 Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement Rev. 1.3, 24-Jun-14 Document Number: 81169 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBP104FAS, VBP104FASR www.vishay.com Vishay Semiconductors 0.1 - 0.1 0.15 ± 0.02 1.2 ± 0.1 0.75 ± 0.05 (0.47 ref.) PACKAGE DIMENSIONS FOR VBP104FAS in millimeters Flat area 0.3 min. 4.4 ± 0.1 0.18 ± 0.2 2.2 Chip Size 2.4 x 2.4 Cathode 0.8 ± 0.1 1.6 ± 0.1 3.9 ± 0.1 1.95 Anode 1 ± 0.15 6.4 ± 0.3 technical drawings according to DIN specifications Recommended solder pad 8.9 1.8 5.4 Drawing-No.: 6.541-5088.01-4 Issue: 1; 15.04.10 22107 Rev. 1.3, 24-Jun-14 Document Number: 81169 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBP104FAS, VBP104FASR www.vishay.com Vishay Semiconductors 0.1 min. (0.47 ref.) Flat area 0.3 min. 0.15 ± 0.02 1.2 ± 0.1 0.75 ± 0.05 PACKAGE DIMENSIONS FOR VBP104FASR in millimeters 4.4 ± 0.1 0.18 ± 0.2 2.2 Chip Size Cathode 0.8 ± 0.1 Anode 3.9 ± 0.1 1.6 ± 0.1 1.95 2.4 x 2.4 1 ± 0.15 6.4 ± 0.3 technical drawings according to DIN Recommended solder pad specifications 8.9 1.8 5.4 Drawing-No.: 6.541-5087.01-4 Issue: 1; 15.04.10 22106 Rev. 1.3, 24-Jun-14 Document Number: 81169 5 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBP104FAS, VBP104FASR www.vishay.com Vishay Semiconductors TAPING DIMENSIONS FOR VBP104FAS in millimeters 21730 TAPING DIMENSIONS FOR VBP104FASR in millimeters 21731 Rev. 1.3, 24-Jun-14 Document Number: 81169 6 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBP104FAS, VBP104FASR www.vishay.com Vishay Semiconductors REEL DIMENSIONS FOR VBP104FAS AND VBP104FASR in millimeters 21732 SOLDER PROFILE DRYPACK 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE 200 max. 30 s Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: max. 100 s Moisture sensitivity: level 3 150 max. 120 s 100 Floor life: 168 h max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 Rev. 1.3, 24-Jun-14 Conditions: Tamb < 30 °C, RH < 60 % DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or recommended conditions: 192 h at 40 °C (+ 5 °C), RH < 5 % or 96 h at 60 °C (+ 5 °C), RH < 5 %. Document Number: 81169 7 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000