VBT1045BP-E3
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Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.41 V at IF = 5 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
D2PAK (TO-263AB)
• Low forward voltage drop, low power losses
K
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
2
1
VBT1045BP
PIN 1
PIN 2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
K
HEATSINK
DESIGN SUPPORT TOOLS
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
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MECHANICAL DATA
Models
Available
Case: D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
45 V
IFSM
100 A
VF at IF = 10 A
0.52 V
TOP max. (AC mode)
150 °C
TJ max. (DC forward current)
Package
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
200 °C
D2PAK
per
(TO-263AB)
Circuit configuration
Single
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum DC forward bypassing current (fig. 1)
SYMBOL
VBT1045BP
UNIT
VRRM
45
V
10
A
IF(DC)
(1)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
IFSM
100
A
Operating junction temperature range (AC mode)
TOP
-40 to +150
°C
Junction temperature in DC forward current without reverse bias, t 1 h
TJ (2)
200
°C
Notes
(1) With heatsink
(2) Meets the requirements of IEC 61215 ed.2 bypass diode thermal test
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 5 A
Instantaneous forward voltage
IF = 10 A
IF = 5 A
IF = 10 A
Reverse current
VR = 45 V
SYMBOL
TA = 25 °C
VF (1)
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR (2)
TYP.
MAX.
0.50
-
UNIT
0.57
0.68
0.41
-
0.52
0.64
-
500
μA
5
15
mA
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
Revision: 20-Jun-2018
Document Number: 89452
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT1045BP-E3
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
VBT1045BP
UNIT
RJC
3.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
TO-263AB
VBT1045BP-E3/4W
PREFERRED P/N
1.37
4W
50/tube
DELIVERY MODE
Tube
TO-263AB
VBT1045BP-E3/8W
1.37
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Instantaneous Reverse Current (mA)
12
DC Forward Current (A)
10
8
6
4
DC Forward Current at
Thermal Equilibrium
2
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
0
0
25
50
75
100
125
150
175
200
20
Case Temperature (°C)
80
100
Fig. 3 - Typical Reverse Characteristics
TA = 150 °C
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Junction Capacitance (pF)
10 000
100
Instantaneous Forward Current (A)
60
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
10
40
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
0.1
1
10
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 2 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Junction Capacitance
100
Revision: 20-Jun-2018
Document Number: 89452
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT1045BP-E3
Transient Thermal Impedance (°C/W)
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Vishay General Semiconductor
10
Junction to Case
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
Mounting Pad Layout
0.42 (10.66) min.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 20-Jun-2018
Document Number: 89452
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000