VBT1060C-M3
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 2.5 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
D2PAK (TO-263AB)
• Low forward voltage drop, low power losses
K
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1
VBT1060C
PIN 1
PIN 2
K
TYPICAL APPLICATIONS
HEATSINK
DESIGN SUPPORT TOOLS
click logo to get started
Models
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Available
Case: D2PAK (TO-263AB)
PRIMARY CHARACTERISTICS
IF(AV)
2x5A
VRRM
60 V
IFSM
100 A
VF at IF = 5.0 A
0.50 V
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
TJ max.
150 °C
Package
Circuit configurations
D2PAK (TO-263AB)
Common cathode
per
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
per device
Maximum average forward rectified current (fig. 1)
per diode
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated
load per diode
Operating junction and storage temperature range
SYMBOL
VBT1060C
UNIT
VRRM
60
V
10
IF(AV)
5
A
IFSM
100
TJ, TSTG
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 2.5 A
Instantaneous forward voltage per diode
(1)
IF = 5.0 A
IF = 2.5 A
IF = 5.0 A
Reverse current per diode (2)
VR = 60 V
SYMBOL
TYP.
0.49
-
VF
0.58
0.70
0.39
-
0.50
0.60
-
700
μA
6.9
25
mA
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR
MAX.
UNIT
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
Revision: 21-Jun-2018
Document Number: 87971
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT1060C-M3
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
per diode
Typical thermal resistance
VBT1060C
RJC
per device
UNIT
3.5
°C/W
2.5
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-263AB
VTB1060C-M3/4W
PREFERRED P/N
1.39
4W
50/tube
Tube
TO-263AB
VTB1060C-M3/8W
1.39
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Instantaneous Forward Current (A)
Average Forward Rectified Current (A)
12
10
8
6
4
2
Mounted on Specific Heatsink
TA = 125 °C
1
TA = 100 °C
0.1
TA = 25 °C
0.01
0.001
0
0
25
50
75
100
125
0
150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Case Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
4.0
D = 0.8
D = 0.5
3.5
Instantaneous Reverse Current (mA)
Average Power Disspation (W)
TA = 150 °C
10
D = 0.3
3.0
D = 0.2
2.5
D = 1.0
D = 0.1
2.0
T
1.5
1.0
0.5
D = tp/T
tp
4
5
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
0
0
1
2
3
6
20
30
40
50
60
70
80
90
100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Forward Power Dissipation Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Revision: 21-Jun-2018
Document Number: 87971
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT1060C-M3
www.vishay.com
Vishay General Semiconductor
10
Transient Thermal Impedance (°C/W)
10 000
Junction Capacitance (pF)
Junction to Case
1
0.01
1000
100
10
0.1
1
10
0.1
100
1
10
100
t - Pulse Duration (s)
Reverse Voltage (V)
Fig. 5 - Typical Transient Thermal Impedance Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
D2PAK (TO-263AB)
0.41
1 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591(15.00)
0.055 (1.40)
0.045 (1.14)
0.42
MIN.
(10.66)
0.33
(8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0 to 0.01 (0 to 0.254)
0.037 (0.940)
0.027 (0.686)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
Mounting Pad Layout
0.670 (17.02)
0.591 (15.00)
0.15
(3.81) MIN.
0.08
MIN.
(2.032)
0.105 (2.67)
(0.095) (2.41)
Revision: 21-Jun-2018
Document Number: 87971
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
1
Document Number: 91000
